Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
SI4931DY-T1-GE3

SI4931DY-T1-GE3

MOSFET 2P-CH 12V 6.7A 8SOIC

Vishay Siliconix
2,832 -

RFQ

SI4931DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 12V 6.7A 18mOhm @ 8.9A, 4.5V 1V @ 350µA 52nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) Surface Mount
SQ4937EY-T1_GE3

SQ4937EY-T1_GE3

MOSFET 2 P-CHANNEL 30V 5A 8SOIC

Vishay Siliconix
3,822 -

RFQ

SQ4937EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 P-Channel (Dual) Standard 30V 5A (Tc) 75mOhm @ 3.9A, 10V 2.5V @ 250µA 15nC @ 10V 480pF @ 25V 3.3W -55°C ~ 175°C (TJ) Surface Mount
SQ4937EY-T1_BE3

SQ4937EY-T1_BE3

MOSFET 2 P-CHANNEL 30V 5A 8SOIC

Vishay Siliconix
3,321 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 P-Channel (Dual) Standard 30V 5A (Tc) 75mOhm @ 3.9A, 10V 2.5V @ 250µA 15nC @ 10V 480pF @ 25V 3.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4900DY-T1-E3

SI4900DY-T1-E3

MOSFET 2N-CH 60V 5.3A 8-SOIC

Vishay Siliconix
3,732 -

RFQ

SI4900DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 60V 5.3A 58mOhm @ 4.3A, 10V 3V @ 250µA 20nC @ 10V 665pF @ 15V 3.1W -55°C ~ 150°C (TJ) Surface Mount
SQJ914EP-T1_GE3

SQJ914EP-T1_GE3

MOSFET 2 N-CH 30V POWERPAK SO8

Vishay Siliconix
3,013 -

RFQ

SQJ914EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 30V 30A (Tc) 12mOhm @ 4.5A, 10V 2.5V @ 250µA 25nC @ 10V 1110pF @ 15V 27W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJB00EP-T1_GE3

SQJB00EP-T1_GE3

MOSFET 2 N-CH 60V POWERPAK SO8

Vishay Siliconix
3,340 -

RFQ

SQJB00EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 60V 30A (Tc) 13mOhm @ 10A, 10V 3.5V @ 250µA 35nC @ 10V 1700pF @ 25V 48W -55°C ~ 175°C (TJ) Surface Mount
SQJB80EP-T1_GE3

SQJB80EP-T1_GE3

MOSFET 2 N-CH 80V POWERPAK SO8

Vishay Siliconix
3,663 -

RFQ

SQJB80EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 80V 30A (Tc) 19mOhm @ 8A, 10V 2.5V @ 250µA 32nC @ 10V 1400pF @ 25V 48W -55°C ~ 175°C (TJ) Surface Mount
SQJB42EP-T1_GE3

SQJB42EP-T1_GE3

MOSFET 2 N-CH 40V POWERPAK SO8

Vishay Siliconix
2,294 -

RFQ

SQJB42EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 40V 30A (Tc) 9.5mOhm @ 10A, 10V 3.5V @ 250µA 30nC @ 10V 1500pF @ 25V 48W -55°C ~ 175°C (TJ) Surface Mount
SQJ980AEP-T1_GE3

SQJ980AEP-T1_GE3

MOSFET 2 N-CH 75V POWERPAK SO8

Vishay Siliconix
2,479 -

RFQ

SQJ980AEP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 75V 17A (Tc) 50mOhm @ 3.8A, 10V 2.5V @ 250µA 21nC @ 10V 790pF @ 35V 34W (Tc) -55°C ~ 175°C (TA) Surface Mount
SI7904BDN-T1-E3

SI7904BDN-T1-E3

MOSFET 2N-CH 20V 6A 1212-8

Vishay Siliconix
3,515 -

RFQ

SI7904BDN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 20V 6A 30mOhm @ 7.1A, 4.5V 1V @ 250µA 24nC @ 8V 860pF @ 10V 17.8W -55°C ~ 150°C (TJ) Surface Mount
SI6968BEDQ-T1-E3

SI6968BEDQ-T1-E3

MOSFET 2N-CH 20V 5.2A 8TSSOP

Vishay Siliconix
2,141 -

RFQ

SI6968BEDQ-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 22mOhm @ 6.5A, 4.5V 1.6V @ 250µA 18nC @ 4.5V - 1W -55°C ~ 150°C (TJ) Surface Mount
SI5908DC-T1-GE3

SI5908DC-T1-GE3

MOSFET 2N-CH 20V 4.4A 1206-8

Vishay Siliconix
3,217 -

RFQ

SI5908DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 20V 4.4A 40mOhm @ 4.4A, 4.5V 1V @ 250µA 7.5nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) Surface Mount
SI4288DY-T1-GE3

SI4288DY-T1-GE3

MOSFET 2N-CH 40V 9.2A 8SO

Vishay Siliconix
2,293 -

RFQ

SI4288DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 40V 9.2A 20mOhm @ 10A, 10V 2.5V @ 250µA 15nC @ 10V 580pF @ 20V 3.1W -55°C ~ 150°C (TJ) Surface Mount
SI4932DY-T1-GE3

SI4932DY-T1-GE3

MOSFET 2N-CH 30V 8A 8-SOIC

Vishay Siliconix
2,325 -

RFQ

SI4932DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 30V 8A 15mOhm @ 7A, 10V 2.5V @ 250µA 48nC @ 10V 1750pF @ 15V 3.2W -55°C ~ 150°C (TJ) Surface Mount
SQJ974EP-T1_GE3

SQJ974EP-T1_GE3

MOSFET 2 N-CH 100V POWERPAK SO8

Vishay Siliconix
3,550 -

RFQ

SQJ974EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 100V 30A (Tc) 25.5mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V 1050pF @ 25V 48W -55°C ~ 175°C (TJ) Surface Mount
SQJB90EP-T1_GE3

SQJB90EP-T1_GE3

MOSFET 2 N-CH 80V POWERPAK SO8

Vishay Siliconix
2,233 -

RFQ

SQJB90EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 80V 30A (Tc) 21.5mOhm @ 10A, 10V 3.5V @ 250µA 25nC @ 10V 1200pF @ 25V 48W -55°C ~ 175°C (TJ) Surface Mount
SQJ912BEP-T1_GE3

SQJ912BEP-T1_GE3

MOSFET N-CH DUAL 40V PPSO-8L

Vishay Siliconix
2,514 -

RFQ

SQJ912BEP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 40V 30A (Tc) 11mOhm @ 9A, 10V 2V @ 250µA 60nC @ 10V 3000pF @ 25V 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7972DP-T1-GE3

SI7972DP-T1-GE3

MOSFET 2 N-CH 30V POWERPAK SO8

Vishay Siliconix
3,786 -

RFQ

SI7972DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Standard 60V 8A (Tc) 18mOhm @ 11A, 10V 2.7V @ 250µA 11nC @ 4.5V 1050pF @ 30V 22W -55°C ~ 150°C (TJ) Surface Mount
SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

MOSFET 2 N-CH 30V 8-POWERPAIR

Vishay Siliconix
3,468 -

RFQ

SIZ998DT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual), Schottky Standard 30V 20A (Tc), 60A (Tc) 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V 2.2V @ 250µA 8.1nC @ 4.5V, 19.8nC @ 4.5V 930pF @ 15V, 2620pF @ 15V 20.2W, 32.9W -55°C ~ 150°C (TJ) Surface Mount
SI4900DY-T1-GE3

SI4900DY-T1-GE3

MOSFET 2N-CH 60V 5.3A 8-SOIC

Vishay Siliconix
2,238 -

RFQ

SI4900DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 60V 5.3A 58mOhm @ 4.3A, 10V 3V @ 250µA 20nC @ 10V 665pF @ 15V 3.1W -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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