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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQJ500AEP-T1_GE3MOSFET N/P CHAN 40V SO8L DUAL Vishay Siliconix |
3,142 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N and P-Channel | - | 40V | 30A (Tc) | 27mOhm @ 6A, 10V | 2.3V @ 250µA | 38.1nC @ 10V | 1850pF @ 20V | 48W | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQJ951EP-T1_GE3MOSFET 2P-CH 30V 30A PPAK Vishay Siliconix |
2,159 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 P-Channel (Dual) | Standard | 30V | 30A | 17mOhm @ 7.5A, 10V | 2.5V @ 250µA | 50nC @ 10V | 1680pF @ 10V | 56W | -55°C ~ 175°C (TJ) | Surface Mount |
|
SI7216DN-T1-GE3MOSFET 2N-CH 40V 6A PPAK 1212-8 Vishay Siliconix |
2,365 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 6A | 32mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | 670pF @ 20V | 20.8W | -50°C ~ 150°C (TJ) | Surface Mount |
|
SQJ262EP-T1_GE3MOSFET 2 N-CH 60V POWERPAK SO8 Vishay Siliconix |
3,722 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 60V | 15A (Tc), 40A (Tc) | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 2.5V @ 250µA | 10nC @ 10V, 23nC @ 10V | 550pF @ 25V, 1260pF @ 25V | 27W (Tc), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SI4564DY-T1-GE3MOSFET N/P-CH 40V 10A 8SOIC Vishay Siliconix |
2,125 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 40V | 10A, 9.2A | 17.5mOhm @ 8A, 10V | 2V @ 250µA | 31nC @ 10V | 855pF @ 20V | 3.1W, 3.2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIRB40DP-T1-GE3MOSFET 2 N-CH 40V POWERPAK SO8 Vishay Siliconix |
2,765 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 40A (Tc) | 3.25mOhm @ 10A, 10V | 2.4V @ 250µA | 45nC @ 4.5V | 4290pF @ 20V | 46.2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZ270DT-T1-GE3DUAL N-CHANNEL 100-V (D-S) MOSFE Vishay Siliconix |
3,142 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 100V | 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) | 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V | 2.4V @ 250µA | 27nC @ 10V | 860pF @ 50V, 845pF @ 50V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
SI4946BEY-T1-GE3MOSFET 2N-CH 60V 6.5A 8-SOIC Vishay Siliconix |
3,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 6.5A | 41mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | 840pF @ 30V | 3.7W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQJ260EP-T1_GE3MOSFET 2 N-CH 60V POWERPAK SO8 Vishay Siliconix |
3,320 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 60V | 20A (Tc), 54A (Tc) | 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 20nC @ 10V, 40nC @ 10V | 1100pF @ 25V, 2500pF @ 25V | 27W (Tc), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQJ560EP-T1_GE3MOSFET DUAL N P CH 60V PPAK SO-8 Vishay Siliconix |
3,404 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N and P-Channel | Standard | 60V | 30A (Tc), 18A (Tc) | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 45nC @ 10V | 1650pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SI4559ADY-T1-GE3MOSFET N/P-CH 60V 5.3A 8-SOIC Vishay Siliconix |
3,852 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 60V | 5.3A, 3.9A | 58mOhm @ 4.3A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 3.1W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7212DN-T1-GE3MOSFET 2N-CH 30V 4.9A 1212-8 Vishay Siliconix |
2,607 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4922BDY-T1-E3MOSFET 2N-CH 30V 8A 8-SOIC Vishay Siliconix |
3,925 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 8A | 16mOhm @ 5A, 10V | 1.8V @ 250µA | 62nC @ 10V | 2070pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7949DP-T1-E3MOSFET 2P-CH 60V 3.2A PPAK SO-8 Vishay Siliconix |
2,233 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4816BDY-T1-GE3MOSFET 2N-CH 30V 5.8A 8-SOIC Vishay Siliconix |
3,740 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | LITTLE FOOT® | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 5.8A, 8.2A | 18.5mOhm @ 6.8A, 10V | 3V @ 250µA | 10nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7252ADP-T1-GE3DUAL N-CHANNEL 100-V (D-S) MOSFE Vishay Siliconix |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 100V | 9.3A (Ta), 28.7A (Tc) | 18.6mOhm @ 10A, 10V | 4V @ 250µA | 26.5nC @ 10V | 1266pF @ 50V | 3.6W (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQ4920EY-T1_GE3MOSFET 2N-CH 30V 8A 8SO Vishay Siliconix |
3,319 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 14.5mOhm @ 6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1465pF @ 15V | 4.4W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SI4943CDY-T1-E3MOSFET 2P-CH 20V 8A 8-SOIC Vishay Siliconix |
3,959 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 8A | 19.2mOhm @ 8.3A, 10V | 3V @ 250µA | 62nC @ 10V | 1945pF @ 10V | 3.1W | -50°C ~ 150°C (TJ) | Surface Mount |
|
|
SQ4917EY-T1_GE3MOSFET 2 P-CHANNEL 60V 8A 8SO Vishay Siliconix |
3,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 P-Channel (Dual) | Standard | 60V | 8A (Tc) | 48mOhm @ 4.3A, 10V | 2.5V @ 250µA | 65nC @ 10V | 1910pF @ 30V | 5W (Tc) | -55°C ~ 175°C (TA) | Surface Mount |
|
|
SQJ963EP-T1_GE3MOSFET 2 P-CH 60V POWERPAK SO8 Vishay Siliconix |
2,738 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 P-Channel (Dual) | Standard | 60V | 8A (Tc) | 85mOhm @ 3.5A, 10V | 2.5V @ 250µA | 40nC @ 10V | 1140pF @ 30V | 27W (Tc) | -55°C ~ 175°C (TA) | Surface Mount |
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