Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA1931,BOSCHQ(J

2SA1931,BOSCHQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
3,755 -

RFQ

2SA1931,BOSCHQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,KEHINQ(M

2SA1931,KEHINQ(M

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,048 -

RFQ

2SA1931,KEHINQ(M

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NETQ(J

2SA1931,NETQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,978 -

RFQ

2SA1931,NETQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NETQ(M

2SA1931,NETQ(M

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,746 -

RFQ

2SA1931,NETQ(M

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NIKKIQ(J

2SA1931,NIKKIQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,795 -

RFQ

2SA1931,NIKKIQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NSEIKIQ(J

2SA1931,NSEIKIQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
3,737 -

RFQ

2SA1931,NSEIKIQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,Q(J

2SA1931,Q(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,300 -

RFQ

2SA1931,Q(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,SINFQ(J

2SA1931,SINFQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,290 -

RFQ

2SA1931,SINFQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1972,F(J

2SA1972,F(J

TRANS PNP 400V 0.5A TO92MOD

Toshiba Semiconductor and Storage
2,550 -

RFQ

2SA1972,F(J

Ficha técnica

Bulk - Obsolete PNP 500 mA 400 V 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 150°C (TJ) Through Hole
2SA1972,T6WNLF(J

2SA1972,T6WNLF(J

TRANS PNP 400V 0.5A TO92MOD

Toshiba Semiconductor and Storage
3,880 -

RFQ

2SA1972,T6WNLF(J

Ficha técnica

Bulk - Obsolete PNP 500 mA 400 V 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 150°C (TJ) Through Hole
2SA949-O(TE6,F,M)

2SA949-O(TE6,F,M)

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,748 -

RFQ

2SA949-O(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(JVC1,F,M)

2SA949-Y(JVC1,F,M)

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,102 -

RFQ

2SA949-Y(JVC1,F,M)

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(T6JVC1,FM

2SA949-Y(T6JVC1,FM

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,264 -

RFQ

2SA949-Y(T6JVC1,FM

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(T6ONK1,FM

2SA949-Y(T6ONK1,FM

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,013 -

RFQ

2SA949-Y(T6ONK1,FM

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(T6SHRP,FM

2SA949-Y(T6SHRP,FM

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,275 -

RFQ

2SA949-Y(T6SHRP,FM

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(TE6,F,M)

2SA949-Y(TE6,F,M)

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,337 -

RFQ

2SA949-Y(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,F(J

2SA949-Y,F(J

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,857 -

RFQ

2SA949-Y,F(J

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,ONK-1F(J

2SA949-Y,ONK-1F(J

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,275 -

RFQ

2SA949-Y,ONK-1F(J

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,ONK-1F(M

2SA949-Y,ONK-1F(M

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,806 -

RFQ

2SA949-Y,ONK-1F(M

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,202 -

RFQ

2SA965-O(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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