Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA965-O,F(J

2SA965-O,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,593 -

RFQ

2SA965-O,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(F,M)

2SA965-Y(F,M)

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,361 -

RFQ

2SA965-Y(F,M)

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,024 -

RFQ

2SA965-Y(T6CANO,FM

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,040 -

RFQ

2SA965-Y,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,SWFF(M

2SA965-Y,SWFF(M

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,124 -

RFQ

2SA965-Y,SWFF(M

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6F(J

2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,503 -

RFQ

2SA965-Y,T6F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6KOJPF(J

2SA965-Y,T6KOJPF(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,142 -

RFQ

2SA965-Y,T6KOJPF(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

TRANS PNP 60V 3A TO220NIS

Toshiba Semiconductor and Storage
3,199 -

RFQ

2SB1375,CLARIONF(M

Ficha técnica

Bulk - Obsolete PNP 3 A 60 V 1.5V @ 200mA, 2A 10µA (ICBO) 100 @ 500mA, 5V 2 W 9MHz 150°C (TJ) Through Hole
2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
3,570 -

RFQ

2SB1457(T6CANO,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(T6CNO,A,F)

2SB1457(T6CNO,A,F)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,253 -

RFQ

2SB1457(T6CNO,A,F)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(T6DW,F,M)

2SB1457(T6DW,F,M)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,554 -

RFQ

2SB1457(T6DW,F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(TE6,F,M)

2SB1457(TE6,F,M)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,011 -

RFQ

2SB1457(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,395 -

RFQ

2SB1457,T6TOTOF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457,T6YMEF(M

2SB1457,T6YMEF(M

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
3,940 -

RFQ

2SB1457,T6YMEF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

TRANS PNP 100V 4A TO220NIS

Toshiba Semiconductor and Storage
2,515 -

RFQ

2SB1481(TOJS,Q,M)

Ficha técnica

Bulk - Obsolete PNP 4 A 100 V 1.5V @ 6mA, 3A 2µA (ICBO) 2000 @ 3A, 2V 2 W - 150°C (TJ) Through Hole
2SB1495,Q(J

2SB1495,Q(J

TRANS PNP 100V 3A TO220NIS

Toshiba Semiconductor and Storage
2,754 -

RFQ

2SB1495,Q(J

Ficha técnica

Bulk - Obsolete PNP 3 A 100 V 1.5V @ 1.5mA, 1.5A 10µA (ICBO) 2000 @ 2A, 2V 2 W - 150°C (TJ) Through Hole
2SC2229-O(MITIF,M)

2SC2229-O(MITIF,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,224 -

RFQ

2SC2229-O(MITIF,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(SHP,F,M)

2SC2229-O(SHP,F,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,860 -

RFQ

2SC2229-O(SHP,F,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(SHP1,F,M

2SC2229-O(SHP1,F,M

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,628 -

RFQ

2SC2229-O(SHP1,F,M

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(T6MIT1FM

2SC2229-O(T6MIT1FM

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,558 -

RFQ

2SC2229-O(T6MIT1FM

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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