Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC2229-O(MIT1F,M)

2SC2229-O(MIT1F,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,195 -

RFQ

2SC2229-O(MIT1F,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC5886A,L1XHQ(O

2SC5886A,L1XHQ(O

TRANSISTOR NPN BIPO PWMOLD

Toshiba Semiconductor and Storage
2,630 -

RFQ

2SC5886A,L1XHQ(O

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - -
2SD1223,L1XGQ(O

2SD1223,L1XGQ(O

TRANSISTOR NPN DARL PWMOLD

Toshiba Semiconductor and Storage
2,976 -

RFQ

2SD1223,L1XGQ(O

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - -
2SA1668

2SA1668

TRANSISTOR PNP TO220

Toshiba Semiconductor and Storage
2,990 -

RFQ

Tube * Active - - - - - - - - - -
2SB1258

2SB1258

TRANSISTOR PNP DARL TO220

Toshiba Semiconductor and Storage
2,022 -

RFQ

Tube * Active - - - - - - - - - -
2SC4883A

2SC4883A

TRANSISTOR NPN TO220

Toshiba Semiconductor and Storage
3,139 -

RFQ

Tube * Active - - - - - - - - - -
2SC5354,TOJSQ(O

2SC5354,TOJSQ(O

TRANSISTOR NPN TO-3PN

Toshiba Semiconductor and Storage
3,628 -

RFQ

2SC5354,TOJSQ(O

Ficha técnica

Tube * Active - - - - - - - - - -
2SC5354,XGQ(O

2SC5354,XGQ(O

TRANSISTOR NPN TO-3PN

Toshiba Semiconductor and Storage
2,725 -

RFQ

2SC5354,XGQ(O

Ficha técnica

Tube * Active - - - - - - - - - -
TTA006B,Q(S

TTA006B,Q(S

TRANSISTOR PNP BIPO TO126N

Toshiba Semiconductor and Storage
2,742 -

RFQ

TTA006B,Q(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTB1020B,S4X(S

TTB1020B,S4X(S

TRANSISTOR PNP TO220

Toshiba Semiconductor and Storage
3,532 -

RFQ

TTB1020B,S4X(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTB1067B,Q(S

TTB1067B,Q(S

TRANSISTOR PNP BIPO TO126N

Toshiba Semiconductor and Storage
3,434 -

RFQ

TTB1067B,Q(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTC011B,Q(S

TTC011B,Q(S

TRANSISTOR NPN BIPO TO126N

Toshiba Semiconductor and Storage
2,574 -

RFQ

TTC011B,Q(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTC5460B,Q(S

TTC5460B,Q(S

TRANSISTOR NPN TO126N

Toshiba Semiconductor and Storage
2,570 -

RFQ

TTC5460B,Q(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTD1415B,S4X(S

TTD1415B,S4X(S

TRANSISTOR NPN TO220SIS

Toshiba Semiconductor and Storage
3,128 -

RFQ

TTD1415B,S4X(S

Ficha técnica

Tube * Active - - - - - - - - - -
TTD1509B,Q(S

TTD1509B,Q(S

TRANSISTOR NPN TO126N

Toshiba Semiconductor and Storage
3,930 -

RFQ

TTD1509B,Q(S

Ficha técnica

Tube * Active - - - - - - - - - -
2SA1013-O,T6MIBF(J

2SA1013-O,T6MIBF(J

TRANS PNP 160V 1A TO92L

Toshiba Semiconductor and Storage
2,266 -

RFQ

2SA1013-O,T6MIBF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 160 V 1.5V @ 50mA, 500mA 1µA (ICBO) 60 @ 200mA, 5V 900 mW 50MHz 150°C (TJ) Through Hole
2SA1020A,NSEIKIF(J

2SA1020A,NSEIKIF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,541 -

RFQ

2SA1020A,NSEIKIF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1020A,T6CSF(J

2SA1020A,T6CSF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,905 -

RFQ

2SA1020A,T6CSF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1020-O(F,M)

2SA1020-O(F,M)

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,901 -

RFQ

2SA1020-O(F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1020-O(TE6,F,M)

2SA1020-O(TE6,F,M)

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,790 -

RFQ

2SA1020-O(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
Total 438 Record«Prev1... 4567891011...22Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario