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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
CHL8510CRT IC GATE DRVR HALF-BRIDGE 10DFN Infineon Technologies	2,601	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Not For New Designs	Half-Bridge	Synchronous	2	N-Channel MOSFET	10.8V ~ 13.2V	0.8V, 1V	3A, 4A	Non-Inverting	35 V	21ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount
IRS2127STRPBF IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies	3,287	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IR21064STRPBF IC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies	3,138	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2102STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,150	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	-	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2128SPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	2,523	-	RFQ	Ficha técnica	Tube	-	Active	High-Side or Low-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 20V	0.8V, 3V	250mA, 500mA	Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2108SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,775	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS4427PBF IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies	2,306	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.5V	2.3A, 3.3A	Non-Inverting	-	25ns, 25ns	-40°C ~ 150°C (TJ)	Through Hole
IR2183SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,666	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Inverting, Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS21864PBF IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	405	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	4A, 4A	Non-Inverting	600 V	22ns, 18ns	-40°C ~ 150°C (TJ)	Through Hole
IR2109PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	670	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IRS2308PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	188	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	100ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole
IR21844PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,585	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IR2132SPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	530	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	80ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount
6EDL04I06NTXUMA1 IC GATE DRVR HALF-BRIDG DSO28-17 Infineon Technologies	2,377	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	EiceDriver™	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel, P-Channel MOSFET	13V ~ 17.5V	1.1V, 1.7V	-	Non-Inverting	600 V	60ns, 26ns	-40°C ~ 125°C (TJ)	Surface Mount
IR2183PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,056	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Inverting, Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IR2133JTRPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	2,151	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	90ns, 40ns	125°C (TJ)	Surface Mount
1EDN7146GXTMA1 INT. POWERSTAGE/DRIVER PG-VSON-1 Infineon Technologies	2,307	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	EiceDRIVER™	Active	High-Side or Low-Side	Independent	2	N-Channel MOSFET	4.2V ~ 11V	-	500mA, 500mA	Non-Inverting	-	11ns, 11ns	-40°C ~ 125°C (TJ)	Surface Mount
1EDN7136GXTMA1 INT. POWERSTAGE/DRIVER PG-VSON-1 Infineon Technologies	2,687	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	EiceDRIVER™	Active	High-Side or Low-Side	Independent	2	N-Channel MOSFET	4.2V ~ 11V	-	1A, 1A	Non-Inverting	-	5.5ns, 5.5ns	-40°C ~ 125°C (TJ)	Surface Mount
IRS2001PBF-INF BUFFER/INVERTER BASED PERIPHERAL Infineon Technologies	2,153	-	RFQ	Ficha técnica	Bulk	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 35ns	-40°C ~ 125°C (TJ)	Through Hole
IR2136JPBF-INF 3-PHASE BRIDGE DRIVER Infineon Technologies	3,778	-	RFQ	Ficha técnica	Bulk	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	200mA, 350mA	Non-Inverting	600 V	125ns, 50ns	-40°C ~ 125°C (TA)	Surface Mount