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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IR2121PBF IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies	2,577	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 18V	0.8V, 2.2V	1.6A, 3.3A	Non-Inverting	-	43ns, 26ns	-40°C ~ 150°C (TJ)	Through Hole
IR2113PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,943	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3V ~ 20V	6V, 9.5V	2A, 2A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
IR2213SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	3,634	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	12V ~ 20V	6V, 9.5V	2A, 2.5A	Non-Inverting	1200 V	25ns, 17ns	-55°C ~ 150°C (TJ)	Surface Mount
IR2130SPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	3,132	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	80ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount
1EDN7512BXTSA1 IC GATE DRVR LOW-SIDE SOT23-5 Infineon Technologies	3,207	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	EiceDriver™	Active	Low-Side	Single	1	N-Channel MOSFET	4.5V ~ 20V	-	4A, 8A	Inverting, Non-Inverting	-	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount
1EDN7550UXTSA1 IC GATE DRVR HALF-BRIDGE TSNP-6 Infineon Technologies	2,183	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	EiceDriver™	Active	High-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 20V	-	4A, 8A	Non-Inverting	-	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2004STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,075	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2153DSTRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,369	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.4V	-	180mA, 260mA	RC Input Circuit	600 V	120ns, 50ns	-40°C ~ 125°C (TJ)	Surface Mount
IR2304STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,511	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600 V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2111STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,712	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	8.3V, 12.6V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2308SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,333	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	100ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2304SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,999	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600 V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2011STRPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	3,391	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side or Low-Side	Independent	2	N-Channel MOSFET	10V ~ 20V	0.7V, 2.2V	1A, 1A	Inverting	200 V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2301SPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	3,855	-	RFQ	Ficha técnica	Tube	-	Active	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	5V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	130ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2101SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,402	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2136STRPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	2,597	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	200mA, 350mA	Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2117SPBF IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies	2,779	-	RFQ	Ficha técnica	Tube	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2104SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,420	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR21531DPBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,772	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.6V	-	-	RC Input Circuit	600 V	80ns, 45ns	-40°C ~ 125°C (TJ)	Through Hole
IR2127SPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	796	-	RFQ	Ficha técnica	Tube	-	Active	High-Side or Low-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 20V	0.8V, 3V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount