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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IRS21531DPBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,601	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.4V	-	180mA, 260mA	RC Input Circuit	600 V	120ns, 50ns	-40°C ~ 125°C (TJ)	Through Hole
IR2111PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,968	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	8.3V, 12.6V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2103PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,310	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Inverting, Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR4427PBF IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies	329	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.7V	2.3A, 3.3A	Non-Inverting	-	15ns, 10ns	-40°C ~ 150°C (TJ)	Through Hole
IR21531PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,734	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.6V	-	-	RC Input Circuit	600 V	80ns, 45ns	-40°C ~ 125°C (TJ)	Through Hole
IR2302SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	808	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	5V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	130ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2004PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,055	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole
IR2112SPBF IC GATE DRVR HI/LOW SIDE 16SOIC Infineon Technologies	3,055	-	RFQ	Ficha técnica	Bulk,Tube	-	Active	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2104PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,720	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2102SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,435	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS23364DSTRPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	2,015	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	11.5V ~ 20V	0.8V, 2.5V	200mA, 350mA	Non-Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2110PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	397	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	500 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
IRS2453DPBF IC GATE DRVR FULL-BRIDGE 14DIP Infineon Technologies	211	-	RFQ	Ficha técnica	Tube	-	Active	Full-Bridge	Synchronous	1	N-Channel MOSFET	10V ~ 15.6V	4.7V, 9.3V	180mA, 260mA	RC Input Circuit	600 V	120ns, 50ns	-25°C ~ 125°C (TJ)	Through Hole
IR2112PBF IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	2,770	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2181PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	245	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IR2302PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	587	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	5V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	130ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2213PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,514	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	12V ~ 20V	6V, 9.5V	2A, 2.5A	Non-Inverting	1200 V	25ns, 17ns	-55°C ~ 150°C (TJ)	Through Hole
IR2235JTRPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	500	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
IR2233JPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	305	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
IR2130PBF IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies	843	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	80ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole