Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
CNY174

CNY174

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,052 -

RFQ

CNY174

Ficha técnica

Tube - Obsolete 1 5300Vrms 160% @ 10mA 320% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
H11D1

H11D1

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,370 -

RFQ

H11D1

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11D2

H11D2

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,695 -

RFQ

H11D2

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11AA3

H11AA3

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,362 -

RFQ

H11AA3

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA - - - AC, DC Transistor with Base 30V - 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
H11AA1

H11AA1

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,727 -

RFQ

H11AA1

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - - - AC, DC Transistor with Base 30V - 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
H11AA2

H11AA2

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,547 -

RFQ

H11AA2

Ficha técnica

Tube - Obsolete 1 5300Vrms 10% @ 10mA - - - AC, DC Transistor with Base 30V - 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
H11AA4

H11AA4

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,555 -

RFQ

H11AA4

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - - - AC, DC Transistor with Base 30V - 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
CNY172

CNY172

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,006 -

RFQ

CNY172

Ficha técnica

Tube - Obsolete 1 5300Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Surface Mount
H11A1

H11A1

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,233 -

RFQ

H11A1

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 400mV -55°C ~ 100°C Through Hole
CNW11AV1

CNW11AV1

OPTOISOLATOR TRANS OUT 6-DIP

onsemi
2,311 -

RFQ

CNW11AV1

Ficha técnica

Tube - Obsolete 1 4000Vrms 100% @ 10mA 300% @ 10mA - - DC Transistor with Base 70V 100mA - 100 mA 400mV - Through Hole
H11A2

H11A2

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,228 -

RFQ

H11A2

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 400mV -55°C ~ 100°C Through Hole
TIL111

TIL111

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,932 -

RFQ

TIL111

Ficha técnica

Tube - Obsolete 1 5300Vrms - - - 10µs, 10µs (Max) DC Transistor with Base 30V 2mA 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
4N38

4N38

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,974 -

RFQ

4N38

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 80V 100mA 1.15V 80 mA 1V -55°C ~ 100°C Through Hole
H11D3

H11D3

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,074 -

RFQ

H11D3

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11AA1300

H11AA1300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,449 -

RFQ

H11AA1300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - - - AC, DC Transistor with Base 30V - 1.2V 100 mA 400mV -55°C ~ 100°C Through Hole
H11B1

H11B1

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,023 -

RFQ

H11B1

Ficha técnica

Tube - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11B1300

H11B1300

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,767 -

RFQ

H11B1300

Ficha técnica

Tube - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11B2

H11B2

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,768 -

RFQ

H11B2

Ficha técnica

Tube - Obsolete 1 5300Vrms 200% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11G3

H11G3

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,539 -

RFQ

H11G3

Ficha técnica

Tube - Obsolete 1 5300Vrms 200% @ 1mA - 5µs, 100µs - DC Darlington with Base 55V - 1.3V 60 mA 1.2V -55°C ~ 100°C Through Hole
H11AA814

H11AA814

OPTOISO 5.3KV TRANSISTOR 4DIP

onsemi
2,390 -

RFQ

H11AA814

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 1mA 300% @ 1mA - 2.4µs, 2.4µs AC, DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 100°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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