Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
4N35S

4N35S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
3,726 -

RFQ

4N35S

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 300mV -55°C ~ 100°C Surface Mount
4N35300

4N35300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,565 -

RFQ

4N35300

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY171

CNY171

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,648 -

RFQ

CNY171

Ficha técnica

Tube - Obsolete 1 5300Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F1

CNY17F1

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,543 -

RFQ

CNY17F1

Ficha técnica

Tube - Obsolete 1 5300Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F2

CNY17F2

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,773 -

RFQ

CNY17F2

Ficha técnica

Tube - Obsolete 1 5300Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F3

CNY17F3

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,237 -

RFQ

CNY17F3

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
H11A3

H11A3

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,867 -

RFQ

H11A3

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 400mV -55°C ~ 100°C Through Hole
H11B255

H11B255

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
2,623 -

RFQ

H11B255

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 25µs, 18µs - DC Darlington with Base 55V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11G1S

H11G1S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,515 -

RFQ

H11G1S

Ficha técnica

Tube - Obsolete 1 5300Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 100V - 1.3V 60 mA 1V -55°C ~ 100°C Surface Mount
H24A1

H24A1

OPTOCOUPLER TRANS-OUT UL 4-DIP

onsemi
2,703 -

RFQ

H24A1

Ficha técnica

Tube - Obsolete 1 5300Vrms - - - - DC Darlington 30V - - 60 mA 400mV - Through Hole
MCT2M

MCT2M

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
3,972 -

RFQ

MCT2M

Ficha técnica

Tube - Obsolete 1 7500Vpk 20% @ 10mA - 2µs, 2µs 2µs, 1.5µs DC Transistor with Base 30V 50mA 1.25V 60 mA 400mV -40°C ~ 100°C Through Hole
MOC8100M

MOC8100M

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
3,750 -

RFQ

MOC8100M

Ficha técnica

Tube - Obsolete 1 7500Vpk 30% @ 1mA - 20µs, 20µs (Max) 2µs, 2µs DC Transistor with Base 30V - 1.2V 60 mA 500mV -55°C ~ 100°C Through Hole
MOC8106

MOC8106

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,836 -

RFQ

MOC8106

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA 150% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.15V 100 mA 400mV -55°C ~ 100°C Through Hole
MOC8111

MOC8111

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,930 -

RFQ

MOC8111

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 3µs, 18µs 2µs, 11µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
MOC8112

MOC8112

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,143 -

RFQ

MOC8112

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA - 4.2µs, 23µs 3µs, 14µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
MOC8113

MOC8113

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,925 -

RFQ

MOC8113

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 4.2µs, 23µs 3µs, 14µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
4N25300

4N25300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,194 -

RFQ

4N25300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 500mV -55°C ~ 100°C Through Hole
4N25300W

4N25300W

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,197 -

RFQ

4N25300W

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 500mV -55°C ~ 100°C Through Hole
4N253S

4N253S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
3,403 -

RFQ

4N253S

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 500mV -55°C ~ 100°C Surface Mount
4N253SD

4N253SD

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,423 -

RFQ

4N253SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 500mV -55°C ~ 100°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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