Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
H11F1

H11F1

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
3,118 -

RFQ

H11F1

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
4N36

4N36

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,606 -

RFQ

4N36

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 300mV -55°C ~ 100°C Through Hole
MCT2

MCT2

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,678 -

RFQ

MCT2

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 1.1µs, 50µs - DC Transistor with Base 30V 50mA 1.25V 100 mA 400mV -55°C ~ 100°C Through Hole
MCT2E

MCT2E

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,572 -

RFQ

MCT2E

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 1.1µs, 50µs - DC Transistor with Base 30V 50mA 1.25V 100 mA 400mV -55°C ~ 100°C Through Hole
MCT26

MCT26

TRANSISTOR OPTOISOLATOR

onsemi
2,825 -

RFQ

Tube - Obsolete 1 5300Vrms 6% @ 10mA - - - DC Transistor with Base 30V 50mA - - 400mV - Through Hole
MCT4R

MCT4R

OPTOISO 1KV TRANSISTOR TO206AA

onsemi
3,570 -

RFQ

MCT4R

Ficha técnica

- - Obsolete 1 1000VDC 15% @ 10mA - - - DC Transistor 30V - 1.3V 40 mA 500mV -55°C ~ 125°C Through Hole
MCT4

MCT4

OPTOISO 1KV TRANSISTOR TO206AA

onsemi
2,624 -

RFQ

MCT4

Ficha técnica

- - Obsolete 1 1000VDC 15% @ 10mA - - - DC Transistor 30V - 1.3V 40 mA 500mV -55°C ~ 125°C Through Hole
MCT210

MCT210

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,408 -

RFQ

MCT210

Ficha técnica

Tube - Obsolete 1 5300Vrms 150% @ 10mA - 1µs, 50µs 1µs, 11µs DC Transistor with Base 30V 50mA 1.33V 100 mA 400mV -55°C ~ 100°C Through Hole
CNY171300

CNY171300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,170 -

RFQ

CNY171300

Ficha técnica

Tube - Obsolete 1 5300Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY172300

CNY172300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,627 -

RFQ

CNY172300

Ficha técnica

Tube - Obsolete 1 5300Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY173300

CNY173300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,622 -

RFQ

CNY173300

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY173

CNY173

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,231 -

RFQ

CNY173

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY174300

CNY174300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,290 -

RFQ

CNY174300

Ficha técnica

Tube - Obsolete 1 5300Vrms 160% @ 10mA 320% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
H11A1300

H11A1300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,756 -

RFQ

H11A1300

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 400mV -55°C ~ 100°C Through Hole
H11D1300

H11D1300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,910 -

RFQ

H11D1300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11D2300

H11D2300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,282 -

RFQ

H11D2300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
MCT2200300

MCT2200300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,680 -

RFQ

MCT2200300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V 50mA 1.25V 100 mA 400mV -55°C ~ 100°C Through Hole
MCT5200

MCT5200

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,554 -

RFQ

MCT5200

Ficha técnica

Tube - Obsolete 1 5300Vrms 75% @ 10mA - 1.6µs, 18µs 1.3µs, 16µs DC Transistor with Base 30V 150mA 1.25V 50 mA 400mV -55°C ~ 100°C Through Hole
MCT5201

MCT5201

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,729 -

RFQ

MCT5201

Ficha técnica

Tube - Obsolete 1 5300Vrms 120% @ 5mA - 3µs, 12µs 2.5µs, 16µs DC Transistor with Base 30V 150mA 1.25V 50 mA 400mV -55°C ~ 100°C Through Hole
MCT5210

MCT5210

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,985 -

RFQ

MCT5210

Ficha técnica

Tube - Obsolete 1 5300Vrms 70% @ 3mA - 10µs, 400ns - DC Transistor with Base 30V 150mA 1.25V 50 mA 400mV -55°C ~ 100°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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