Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NTE576-6

NTE576-6

R-SI 600V 5 AMP 35NS

NTE Electronics, Inc
3,712 -

RFQ

NTE576-6

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 75pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 5A -65°C ~ 125°C 1.7 V @ 5 A
NTE506

NTE506

R-SI-HI CUR/FAST SWITCH

NTE Electronics, Inc
6,388 -

RFQ

NTE506

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 mA @ 1500 V 1500 V 500mA -65°C ~ 150°C 2.5 V @ 500 mA
NTE6081

NTE6081

R-SCHOTTKY 16A 45V

NTE Electronics, Inc
245 -

RFQ

NTE6081

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 45 V 45 V 16A -65°C ~ 150°C 630 mV @ 16 A
NTE625

NTE625

R-SI 200V 8A 150NS

NTE Electronics, Inc
735 -

RFQ

NTE625

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 150 ns 10 µA @ 200 V 200 V 8A -65°C ~ 175°C 1.3 V @ 8 A
NTE597

NTE597

R-SI 200V 8AMP ULTRA-FAST

NTE Electronics, Inc
2,559 -

RFQ

NTE597

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 500 µA @ 200 V 200 V 8A -65°C ~ 175°C 1.3 V @ 8 A
1N4151

1N4151

D-SI 75PRV .05A

NTE Electronics, Inc
10,102 -

RFQ

1N4151

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz 4 ns 50 nA @ 50 V 75 V 150mA 175°C (Max) 1 V @ 50 mA
1N4154

1N4154

D-SI 35PRV .03A

NTE Electronics, Inc
3,952 -

RFQ

1N4154

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 100 nA @ 25 V 35 V 100mA 175°C (Max) 1 V @ 30 mA
1N914A

1N914A

D-SI 100PRV .02A

NTE Electronics, Inc
3,527 -

RFQ

1N914A

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA 175°C (Max) 1 V @ 20 mA
NTE637

NTE637

D-SI SCHOTTKY 30V 200MA

NTE Electronics, Inc
1,364 -

RFQ

NTE637

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA -55°C ~ 150°C 800 mV @ 100 mA
1N486B

1N486B

D-SI 250PRV .1A

NTE Electronics, Inc
3,881 -

RFQ

1N486B

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 50 nA @ 225 V 250 V 200mA 175°C (Max) 1 V @ 100 mA
1N5407

1N5407

R-800 PRV 3A

NTE Electronics, Inc
8,952 -

RFQ

1N5407

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 800 V 800 V 3A -65°C ~ 170°C 1 V @ 3 A
1N458A

1N458A

DIODE GEN PURP 150V 500MA DO35

NTE Electronics, Inc
1,400 -

RFQ

1N458A

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 25 µA @ 125 V 150 V 500mA 175°C (Max) 1 V @ 100 mA
NTE639

NTE639

R-SI 1300V 3A STANDARD

NTE Electronics, Inc
11,152 -

RFQ

NTE639

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz - 5 µA @ 1300 V 1300 V 3A -65°C ~ 125°C 1 V @ 3 A
UF4004

UF4004

R-400V 1A ULTRA FAST

NTE Electronics, Inc
4,663 -

RFQ

UF4004

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 1A -65°C ~ 150°C 1 V @ 1 A
RGP15A

RGP15A

R-50V 1.5A FAST SW

NTE Electronics, Inc
2,092 -

RFQ

RGP15A

Ficha técnica

Bag RGP15 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1.5A - 1.3 V @ 1.5 A
UF4002

UF4002

R-100V 1A ULTRA FAST

NTE Electronics, Inc
1,429 -

RFQ

UF4002

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 1A -65°C ~ 150°C 1 V @ 1 A
NTE5817

NTE5817

R-1000PRV 6A

NTE Electronics, Inc
5,007 -

RFQ

NTE5817

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 6A -50°C ~ 150°C 1 V @ 6 A
NTE5817HC

NTE5817HC

R-SI 1000V 10AMP

NTE Electronics, Inc
3,422 -

RFQ

NTE5817HC

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 10A -55°C ~ 125°C 1 V @ 10 A
1N645

1N645

D-SI 225V .4A

NTE Electronics, Inc
314 -

RFQ

1N645

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 200 nA @ 225 V 225 V 400mA -65°C ~ 175°C 1 V @ 400 mA
NTE5962

NTE5962

R-400PRV 25A CATH CASE

NTE Electronics, Inc
411 -

RFQ

NTE5962

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 1 mA @ 400 V 400 V 25A -65°C ~ 175°C 1.7 V @ 57 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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