Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N5404

1N5404

R-400 PRV 3A

NTE Electronics, Inc
30,832 -

RFQ

1N5404

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.2 V @ 3 A
NTE177

NTE177

D-SI-GEN PURP DET 200 PRV

NTE Electronics, Inc
7,126 -

RFQ

NTE177

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 200 V 250mA 175°C (Max) 1.25 V @ 200 mA
NTE5804

NTE5804

R-400 PRV 3A AXIAL LEAD

NTE Electronics, Inc
7,008 -

RFQ

NTE5804

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
NTE519

NTE519

D-SI-FAST SWITCHING

NTE Electronics, Inc
5,018 -

RFQ

NTE519

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 8 ns 5 µA @ 75 V 100 V 150mA 200°C (Max) 1 V @ 10 mA
NTE621

NTE621

D-400V 1AMP SURFACE MNT

NTE Electronics, Inc
4,924 -

RFQ

NTE621

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
NTE125

NTE125

R-SI 1000V 1A DO-41

NTE Electronics, Inc
135,065 -

RFQ

NTE125

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
NTE116

NTE116

R-SI 600V 1A

NTE Electronics, Inc
45,320 -

RFQ

NTE116

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
NTE575

NTE575

R-1000V 1A 70NS

NTE Electronics, Inc
13,112 -

RFQ

NTE575

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 70 ns 50 µA @ 1000 V 1000 V 1A -65°C ~ 150°C 1.5 V @ 1 A
NTE5805

NTE5805

R-500 PRV 3A AXIAL LEAD

NTE Electronics, Inc
14,660 -

RFQ

NTE5805

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 500 V 500 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
NTE156A

NTE156A

R-SI 1000V 3.5A

NTE Electronics, Inc
3,195 -

RFQ

NTE156A

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V 1000 V 3A -65°C ~ 175°C 1.2 V @ 3 A
NTE640

NTE640

R-SCHOTTKY 40V 2A DO214AA

NTE Electronics, Inc
4,528 -

RFQ

NTE640

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 150pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 2A -55°C ~ 125°C 500 mV @ 2 A
NTE641

NTE641

R-SCHOTTKY 60V 2A DO214AA

NTE Electronics, Inc
4,222 -

RFQ

NTE641

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 150pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
NTE642

NTE642

R-SCHOTTKY 100V 2A SUR MT

NTE Electronics, Inc
3,832 -

RFQ

NTE642

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 100pF @ 4V, 1MHz - 500 µA @ 100 V 100 V 2A -55°C ~ 150°C 850 mV @ 2 A
NTE5801

NTE5801

R-100 PRV 3A AXIAL LEAD

NTE Electronics, Inc
18,776 -

RFQ

NTE5801

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
1N5406

1N5406

R-600 PRV 3A

NTE Electronics, Inc
9,566 -

RFQ

1N5406

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.2 V @ 3 A
NTE5806

NTE5806

R-600V PRV 3A AXIAL LEAD

NTE Electronics, Inc
4,304 -

RFQ

NTE5806

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
GI751

GI751

R- 100 PRV 6A

NTE Electronics, Inc
1,244 -

RFQ

GI751

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 2.5 µs 5 µA @ 100 V 100 V 6A -65°C ~ 175°C 900 mV @ 6 A
NTE585

NTE585

D-SCHOTTKY 40V 1A

NTE Electronics, Inc
4,760 -

RFQ

NTE585

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 1A -65°C ~ 125°C 600 mV @ 1 A
1N34A

1N34A

D-GE- 75PRV .005A

NTE Electronics, Inc
13,556 -

RFQ

1N34A

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 1pF @ 1V, 1MHz - 500 µA @ 50 V 65 V 50mA 75°C (Max) 1 V @ 5 mA
NTE587

NTE587

D-SI 200V 1A ULTRA FAST

NTE Electronics, Inc
8,538 -

RFQ

NTE587

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 53pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -65°C ~ 150°C 950 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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