Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NTE156

NTE156

RECT-SI 1000V 2A DO-15

NTE Electronics, Inc
28,177 -

RFQ

NTE156

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 2A -65°C ~ 175°C 1.1 V @ 2 A
GI754

GI754

R- 400 PRV 6A

NTE Electronics, Inc
1,424 -

RFQ

GI754

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 2.5 µs 5 µA @ 400 V 400 V 6A -65°C ~ 175°C 900 mV @ 6 A
NTE5808

NTE5808

R-800 PRV 3A AXIAL LEAD

NTE Electronics, Inc
2,545 -

RFQ

NTE5808

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
NTE6083

NTE6083

D-SCHOTTKY 45V 10AMP

NTE Electronics, Inc
168 -

RFQ

NTE6083

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 10A -65°C ~ 150°C 840 mV @ 20 A
1N5059

1N5059

R-200PRV 1A

NTE Electronics, Inc
1,803 -

RFQ

1N5059

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole 40pF @ 0V, 1MHz 4 µs 1 µA @ 200 V 200 V 3A -55°C ~ 175°C 1 V @ 1 A
NTE583

NTE583

DIODE-SI SCHOTTKY UHF/VHF

NTE Electronics, Inc
630 -

RFQ

NTE583

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz - 200 nA @ 50 V 70 V 15mA (DC) -65°C ~ 200°C 1 V @ 15 mA
NTE109

NTE109

D-GE-GEN PURP 75V

NTE Electronics, Inc
6,066 -

RFQ

NTE109

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 0.8pF @ 1V, 1MHz - 100 µA @ 50 V 100 V 40mA -65°C ~ 90°C 1 V @ 200 mA
1N5060

1N5060

R-400PRV 1A

NTE Electronics, Inc
1,507 -

RFQ

1N5060

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole 40pF @ 0V, 1MHz 4 µs 1 µA @ 400 V 400 V 3A -55°C ~ 175°C 1 V @ 1 A
NTE5802

NTE5802

R-200 PRV 3A AXIAL LEAD

NTE Electronics, Inc
14,743 -

RFQ

NTE5802

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
NTE5812HC

NTE5812HC

R-SI 100V 10AMP

NTE Electronics, Inc
4,940 -

RFQ

NTE5812HC

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 10A -55°C ~ 125°C 1 V @ 10 A
1N5627

1N5627

R-800 PRV 3A

NTE Electronics, Inc
724 -

RFQ

1N5627

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -65°C ~ 175°C 1 V @ 3 A
NTE638

NTE638

D-DAMPER 1600V 2.5A

NTE Electronics, Inc
373 -

RFQ

NTE638

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 4 ns 50 µA @ 1600 V 1600 V 2.5A -40°C ~ 150°C 1.3 V @ 2.5 A
NTE570

NTE570

D-CONTROLLED AVALANCHE

NTE Electronics, Inc
924 -

RFQ

NTE570

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 10 µA @ 130 V 130 V 1A -40°C ~ 150°C -
NTE5814

NTE5814

R-400PRV 6A

NTE Electronics, Inc
11,693 -

RFQ

NTE5814

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 6A -50°C ~ 150°C 1 V @ 6 A
NTE578

NTE578

R-SCHOTTKY 1A 90V

NTE Electronics, Inc
5,040 -

RFQ

NTE578

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 90 V 90 V 1A -65°C ~ 150°C 790 mV @ 1 A
NTE6080

NTE6080

R-SCHOTTKY 10A 60V

NTE Electronics, Inc
2,336 -

RFQ

NTE6080

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 60 V 60 V 10A -65°C ~ 150°C 800 mV @ 10 A
NTE558

NTE558

R-SI 1500V 1A

NTE Electronics, Inc
8,236 -

RFQ

NTE558

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 1500 V 1500 V 500mA -55°C ~ 150°C 2.4 V @ 500 mA
NTE576

NTE576

R-SI 400V 5AMP 35NS

NTE Electronics, Inc
5,684 -

RFQ

NTE576

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 5A -65°C ~ 150°C 1.25 V @ 5 A
NTE586

NTE586

D-SCHOTTKY 40V 3A

NTE Electronics, Inc
4,177 -

RFQ

NTE586

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 3A -65°C ~ 125°C 525 mV @ 3 A
NTE5814HC

NTE5814HC

R-SI 400V 10AMP

NTE Electronics, Inc
5,105 -

RFQ

NTE5814HC

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 10A -55°C ~ 125°C 1 V @ 10 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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