Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UJ3D1220KSD

UJ3D1220KSD

1200V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC
445 -

RFQ

UJ3D1220KSD

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1020pF @ 1V, 1MHz 0 ns 220 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 175°C 1.6 V @ 10 A
NTE6106

NTE6106

R-1600 PRV 450A CATH CASE

NTE Electronics, Inc
2,290 -

RFQ

NTE6106

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 11 µs 50 mA @ 1600 V 1600 V 450A -65°C ~ 175°C 1.6 V @ 1500 A
S4D20120A

S4D20120A

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions
150 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 721pF @ 0V, 1MHz 0 ns 40 µA @ 1200 V 1200 V 20A -55°C ~ 175°C 1.8 V @ 20 A
NTE6107

NTE6107

R-1600PRV 450A ANODE CASE

NTE Electronics, Inc
2,030 -

RFQ

NTE6107

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 11 µs 50 mA @ 1600 V 1600 V 450A -65°C ~ 175°C 1.6 V @ 1500 A
NTE5994

NTE5994

R-600 PRV 40A CATH CASE

NTE Electronics, Inc
186 -

RFQ

NTE5994

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 9 mA @ 600 V 600 V 40A -65°C ~ 190°C 1.3 V @ 40 A
NTE6105

NTE6105

R-1200PRV 550A ANODE CASE

NTE Electronics, Inc
3,294 -

RFQ

NTE6105

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 1200 V 1200 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
S4D20120H

S4D20120H

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions
600 -

RFQ

S4D20120H

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 721pF @ 0V, 1MHz 0 ns 40 µA @ 1200 V 1200 V 20A -55°C ~ 175°C 1.8 V @ 20 A
NTE6104

NTE6104

R-1200 PRV 550A CATH CASE

NTE Electronics, Inc
2,034 -

RFQ

NTE6104

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 1200 V 1200 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
NTE5916

NTE5916

R-200PRV 20A CATH CASE

NTE Electronics, Inc
188 -

RFQ

NTE5916

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 200 V 200 V 20A -65°C ~ 175°C 1.23 V @ 63 A
NTE6128

NTE6128

R-1400V 430A FAST REC

NTE Electronics, Inc
3,273 -

RFQ

NTE6128

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - 1 µs 50 mA @ 1400 V 1400 V 430A -40°C ~ 150°C 2 V @ 800 A
S3D35065D1

S3D35065D1

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions
600 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 2000pF @ 0V, 1MHz 0 ns 45 µA @ 650 V 650 V 35A -55°C ~ 175°C 1.7 V @ 35 A
NTE6129

NTE6129

R-1600V 700A FAST REC

NTE Electronics, Inc
3,324 -

RFQ

NTE6129

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - 2 µs 50 mA @ 1600 V 1600 V 700A -40°C ~ 150°C 2.2 V @ 1500 A
RURU15080

RURU15080

RECTIFIER DIODE

Rochester Electronics, LLC
301 -

RFQ

RURU15080

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 200 ns 500 µA @ 800 V 800 V 150A -65°C ~ 175°C 1.9 V @ 150 A
NTE6109

NTE6109

R-1600PRV 550A ANODE

NTE Electronics, Inc
3,613 -

RFQ

NTE6109

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 1600 V 1600 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
DHG10IM1800UZ-TRL

DHG10IM1800UZ-TRL

SONIC-1800V-10A- DPAK-HV-REEL

IXYS
3,852 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 3pF @ 200V, 1MHz 260 ns 50 µA @ 1800 V 1800 V 10A -55°C ~ 175°C 2.27 V @ 10 A
S12JCH

S12JCH

DIODE GEN PURP 600V 12A DO214AB

Taiwan Semiconductor Corporation
3,771 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
GIB1402HE3_A/I

GIB1402HE3_A/I

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,297 -

RFQ

GIB1402HE3_A/I

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 100 V 100 V 8A -65°C ~ 150°C 975 mV @ 8 A
ES1DLHRUG

ES1DLHRUG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation
3,172 -

RFQ

ES1DLHRUG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
JANTXV1N4148-1

JANTXV1N4148-1

ZENER DIODE

Microchip Technology
3,969 -

RFQ

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 20 ns 500 nA @ 75 V 75 V 200mA (DC) -65°C ~ 175°C 1.2 V @ 100 mA
VS-18TQ040STRRHM3

VS-18TQ040STRRHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division
2,330 -

RFQ

VS-18TQ040STRRHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 40 V 40 V 18A -55°C ~ 175°C 600 mV @ 18 A
Total 50121 Record«Prev12345678910...2507Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario