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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
NTE6113 R-600PRV 1200A NTE Electronics, Inc	2,463	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	30 mA @ 600 V	600 V	1625A	-30°C ~ 175°C	1.93 V @ 3770 A
NTE5827 R-400 PRV 50 A ANODE CASE NTE Electronics, Inc	1,864	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	400pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	50A	-65°C ~ 175°C	1 V @ 50 A
38DN06B02ELEMXPSA1 POWER DIODE BG-D_ELEM-1 Infineon Technologies	2,225	-	RFQ	Ficha técnica	Tray		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	50 mA @ 600 V	600 V	5140A	180°C (Max)	960 mV @ 4500 A
SCS220AMC DIODE SCHOTTKY 650V 20A TO220FM Rohm Semiconductor	976	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	730pF @ 1V, 1MHz	0 ns	400 µA @ 600 V	650 V	20A	175°C (Max)	1.55 V @ 20 A
SI-E8000-4 HV DIODE D49X281 24000V 4A Diotec Semiconductor	2,736	-	RFQ	Ficha técnica	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	1.5 µs	5 µA @ 24000 V	24000 V	4A	-50°C ~ 150°C	12 V @ 4 A
JANTX1N6638 DIODE GEN PURP 125V 300MA D5B Microchip Technology	619	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/578	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	500 nA @ 125 V	125 V	300mA	-65°C ~ 175°C	1.1 V @ 200 mA
M1494NC250 FAST DIODE IXYS	2,477	-	RFQ		Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	3.9 µs	85 mA @ 2500 V	2500 V	1494A	-40°C ~ 125°C	2.34 V @ 4500 A
VS-30WQ04FN-M3 DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division	2,193	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	189pF @ 5V, 1MHz	-	2 mA @ 40 V	40 V	3.5A	-40°C ~ 150°C	530 mV @ 3 A
DSEI12-12AZ-TRL POWER DIODE DISCRETES-FRED TO-26 IXYS	2,787	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	6pF @ 600V, 1MHz	50 ns	250 µA @ 1200 V	1200 V	11A	-40°C ~ 150°C	2.6 V @ 12 A
1N4150UR-1/TR SWITCHING Microchip Technology	3,357	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	4 ns	100 nA @ 50 V	50 V	200mA	-65°C ~ 175°C	1 V @ 200 mA
HSM835JE3/TR13 DIODE SCHOTTKY 35V 8A DO214AB Microchip Technology	2,423	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 35 V	35 V	8A	-55°C ~ 175°C	620 mV @ 8 A
SGL41-30HE3/97 DIODE SCHOTTKY 30V 1A DO213AB Vishay General Semiconductor - Diodes Division	2,042	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	110pF @ 4V, 1MHz	-	500 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
VS-10ETS08S-M3 DIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division	2,942	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	50 µA @ 800 V	800 V	10A	-40°C ~ 150°C	1.1 V @ 10 A
MURS460-E3/I 4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division	2,583	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	2.4A	-55°C ~ 175°C	1.25 V @ 3 A
SD125SC150A.T1 PIV 150V IO 15A CHIP SIZE 125MIL SMC Diode Solutions	2,089	-	RFQ	Ficha técnica	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	500pF @ 5V, 1MHz	-	500 µA @ 150 V	150 V	15A	-55°C ~ 200°C	890 mV @ 15 A
JANTX1N4150-1/TR SIGNAL/COMPUTER DIODE Microchip Technology	2,695	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/231	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	4 ns	100 nA @ 50 V	50 V	200mA	-65°C ~ 175°C	1 V @ 200 mA
HSM840JE3/TR13 DIODE SCHOTTKY 40V 8A DO214AB Microchip Technology	3,208	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 40 V	40 V	8A	-55°C ~ 175°C	620 mV @ 8 A
SGL41-40HE3/97 DIODE SCHOTTKY 40V 1A DO213AB Vishay General Semiconductor - Diodes Division	3,957	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	110pF @ 4V, 1MHz	-	500 µA @ 40 V	40 V	1A	-55°C ~ 125°C	500 mV @ 1 A
HER603G DIODE GEN PURP 6A 200V R-6 Taiwan Semiconductor Corporation	2,160	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	6A (DC)	-55°C ~ 150°C	1 V @ 6 A
MURS460-E3/H 4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division	2,929	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	2.4A	-55°C ~ 175°C	1.25 V @ 3 A