Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
WNSC2D201200WQ

WNSC2D201200WQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
3,000 -

RFQ

WNSC2D201200WQ

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 845pF @ 1V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 20A 175°C 1.8 V @ 20 A
NTE6115

NTE6115

R-1200PRV 1200A

NTE Electronics, Inc
2,177 -

RFQ

NTE6115

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 30 mA @ 1200 V 1200 V 1625A -30°C ~ 175°C 1.93 V @ 3770 A
NTE5870

NTE5870

R-50PRV 12A CATH CASE

NTE Electronics, Inc
1,547 -

RFQ

NTE5870

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 50 V 50 V 12A -65°C ~ 175°C 1.26 V @ 38 A
NTE6111

NTE6111

R-600PRV 1100A

NTE Electronics, Inc
3,454 -

RFQ

NTE6111

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 600 V 600 V 1400A -40°C ~ 180°C 1.31 V @ 1500 A
NTE5871

NTE5871

R-50PRV 12A ANODE CASE

NTE Electronics, Inc
130 -

RFQ

NTE5871

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 50 V 50 V 12A -65°C ~ 175°C 1.26 V @ 38 A
NTE6102

NTE6102

R-600PRV 550A CATH CASE

NTE Electronics, Inc
2,350 -

RFQ

NTE6102

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 600 V 600 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
UJ3D1220K2

UJ3D1220K2

1200V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC
536 -

RFQ

UJ3D1220K2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 810pF @ 1V, 1MHz 0 ns 190 µA @ 1200 V 1200 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
M0659LC450

M0659LC450

FAST DIODE

IXYS
3,570 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - 4.2 µs 100 mA @ 4500 V 4500 V 659A -40°C ~ 125°C 3 V @ 1400 A
PCDP20120G1_T0_00001

PCDP20120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.
2,000 -

RFQ

PCDP20120G1_T0_00001

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.04nF @ 1V, 1MHz 0 ns 180 µA @ 1200 V 1200 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
DZ600N12KHPSA1

DZ600N12KHPSA1

DIODE GEN PURP 1.2KV 735A MODULE

Infineon Technologies
3,317 -

RFQ

DZ600N12KHPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 40 mA @ 1200 V 1200 V 735A -40°C ~ 150°C 1.4 V @ 2200 A
SIC10120PTA-BP

SIC10120PTA-BP

1200V,10A,SIC SBD,TO-247AD PACKA

Micro Commercial Co
1,800 -

RFQ

SIC10120PTA-BP

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 750pF @ 0V, 1MHz - 2 µA @ 1200 V 1200 V 10A -55°C ~ 175°C 1.8 V @ 10 A
46DN06B02ELEMXPSA1

46DN06B02ELEMXPSA1

POWER DIODE BG-D_ELEM-1

Infineon Technologies
3,142 -

RFQ

46DN06B02ELEMXPSA1

Ficha técnica

Tray RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 40 mA @ 600 V 600 V 10450A 180°C (Max) 980 mV @ 6000 A
NTE5894

NTE5894

R-100PRV 16A CATH CASE

NTE Electronics, Inc
119 -

RFQ

NTE5894

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 100 V 100 V 16A -65°C ~ 175°C 1.23 V @ 50 A
DZ600N14KHPSA1

DZ600N14KHPSA1

DIODE GEN PURP 1.4KV 735A MODULE

Infineon Technologies
3,197 -

RFQ

DZ600N14KHPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 40 mA @ 1400 V 1400 V 735A -40°C ~ 150°C 1.4 V @ 2200 A
S3D30065D1

S3D30065D1

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions
275 -

RFQ

Tube RoHS - - Active - - - - - - - -
NTE6121

NTE6121

R-1600V 1200A

NTE Electronics, Inc
3,016 -

RFQ

NTE6121

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 30 mA @ 1600 V 1600 V 1625A -30°C ~ 175°C 1.93 V @ 3770 A
S3D30065H

S3D30065H

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions
300 -

RFQ

S3D30065H

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1705pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 30A -55°C ~ 175°C 1.75 V @ 30 A
DZ600N16KHPSA1

DZ600N16KHPSA1

DIODE GEN PURP 1.6KV 735A MODULE

Infineon Technologies
2,497 -

RFQ

DZ600N16KHPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 40 mA @ 1600 V 1600 V 735A -40°C ~ 150°C 1.4 V @ 2200 A
NTE5889

NTE5889

R-1200V 25A DO4 AK

NTE Electronics, Inc
108 -

RFQ

NTE5889

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 1 mA @ 1200 V 1200 V 30A -40°C ~ 175°C 1.2 V @ 30 A
NTE6114

NTE6114

R-1600PRV 1100A

NTE Electronics, Inc
2,737 -

RFQ

NTE6114

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 1600 V 1600 V 1400A -40°C ~ 180°C 1.31 V @ 1500 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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