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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R5021010RSZTDIODE GEN PURP Powerex Inc. |
2,809 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 300 ns | 45 mA @ 1000 V | 1000 V | 100A | -40°C ~ 150°C | - | |
|
FSV15100VDIODE SCHOTTKY 100V 15A TO277-3 onsemi |
3,651 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 80 µA @ 100 V | 100 V | 15A | -55°C ~ 150°C | 660 mV @ 15 A | |
|
1SS355-FL-HSWITCHING DIODE Formosa Microsemi Co., Ltd. |
231,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 100mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 500mV, 1MHz | 4 ns | 100 nA @ 80 V | - | 100mA | -55°C ~ 150°C | 1.2 V @ 100 mA | |
|
JAN1N3613DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2,240 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 300 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
DST580S-ADIODE SCHOTTKY 5A 80V TO277B Littelfuse Inc. |
2,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 245pF @ 5V, 1MHz | - | 400 µA @ 80 V | 80 V | 5A | -55°C ~ 150°C | 720 mV @ 5 A |
|
1N647/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,798 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | - | - | 1 V @ 400 mA | ||
|
|
DPF30I600AHAPOWER DIODE DISCRETES-FRED TO-24 IXYS |
2,279 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
CDLL0.5A40DIODE SCHOTTKY 40V 500MA DO213AA Microchip Technology |
2,001 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
VBT1045BP-M3/8WDIODE SCHOTTKY 10A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
3,167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 680 mV @ 10 A | |
|
JAN1N3614DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
3,831 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SR310 A0GDIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,655 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
VS-20ETS16-M3DIODE GEN PURP 1.6KV 20A TO220AB Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-75EPU12LHN3DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division |
2,939 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 265 ns | 420 µA @ 1200 V | 1200 V | 75A | -55°C ~ 175°C | 2.55 V @ 75 A |
|
|
CDLL483BDIODE GEN PURP 80V 200MA DO213AA Microchip Technology |
2,353 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
VBT1045BP-M3/4WDIODE SCHOTTKY 10A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,948 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 10 ns | 500 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 680 mV @ 10 A | |
|
|
1N486BZENER DIODE Microchip Technology |
3,680 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
SR320 A0GDIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,555 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
FSV2060LDIODE SCHOTTKY 60V 20A TO277-3 onsemi |
3,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 771pF @ 4V, 1MHz | - | 320 µA @ 60 V | 60 V | 20A | -55°C ~ 150°C | 600 mV @ 20 A | |
|
1N4151DIODE DO-35 75V 0.2A 2NS DComponents |
5,000 | - |
RFQ |
Ficha técnica |
Box | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 200mA | -50°C ~ 175°C | 1 V @ 50 mA | |
|
TSP10H45SDIODE SCHOTTKY 45V 10A TO277A Taiwan Semiconductor Corporation |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 570 mV @ 10 A |
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