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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
DURF1060 DIODE GEN PURP 600V 10A ITO220AC Littelfuse Inc.	3,665	-	RFQ	Ficha técnica	Tube	DUR	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	32 ns	10 µA @ 600 V	600 V	10A	-55°C ~ 150°C	2.2 V @ 10 A
1N5614/TR STD RECTIFIER Microchip Technology	3,351	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 200 V	200 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-50EPU12LHN3 DIODE GEN PURP 1.2KV 50A TO247AD Vishay General Semiconductor - Diodes Division	3,757	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	262 ns	330 µA @ 1200 V	1200 V	50A	-55°C ~ 175°C	2.55 V @ 50 A
V10PL45-M3/87A DIODE SCHOTTKY 45V 6A TO277A Vishay General Semiconductor - Diodes Division	2,735	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	5 mA @ 45 V	45 V	6A	-40°C ~ 150°C	520 mV @ 10 A
1N5617E3 RECTIFIER Microchip Technology	2,403	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 12V, 1MHz	150 ns	500 nA @ 400 V	400 V	1A	-65°C ~ 175°C	800 mV @ 3 A
SJPL-F4 DIODE GEN PURP 400V 1.5A SJP Sanken	3,808	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	10 µA @ 400 V	400 V	1.5A	-40°C ~ 150°C	1.3 V @ 1.5 A
APT15DQ120BG DIODE GEN PURP 1.2KV 15A TO247 Microchip Technology	3,833	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	240 ns	100 µA @ 1200 V	1200 V	15A	-55°C ~ 175°C	3.3 V @ 15 A
DPG30I600AHA POWER DIODE DISCRETES-FRED TO-24 IXYS	3,739	-	RFQ		Tube		RoHS	-	-	Active	-	-	-	-	-	-	-	-
CDLL4148 DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	3,197	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	4pF @ 0V, 1MHz	20 ns	500 nA @ 75 V	75 V	200mA	-65°C ~ 175°C	1 V @ 200 mA
VIT3060G-E3/4W DIODE SCHOTTKY 60V 15A TO262AA Vishay General Semiconductor - Diodes Division	2,766	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	850 µA @ 60 V	60 V	15A	-55°C ~ 150°C	730 mV @ 15 A
JANTX1N4500 DIODE GEN PURP 80V DO35 Microchip Technology	1,235	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/403	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	6 ns	100 nA @ 75 V	80 V	-	-65°C ~ 175°C	1.1 V @ 300 mA
V12P10-M3/86A DIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division	3,042	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 100 V	100 V	12A	-40°C ~ 150°C	700 mV @ 12 A
JANTX1N4153-1 DIODE GEN PURP 50V 150MA DO204AH Microchip Technology	824	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	2pF @ 0V, 1MHz	4 ns	50 nA @ 50 V	50 V	150mA	-65°C ~ 175°C	880 mV @ 20 mA
FSV15150V DIODE SCHOTTKY 150V 15A TO277-3 onsemi	3,336	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	30 µA @ 150 V	150 V	15A	-55°C ~ 150°C	850 mV @ 15 A
JANS1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	331	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 10V, 1MHz	30 ns	5 µA @ 100 V	100 V	3A	-65°C ~ 175°C	875 mV @ 4 A
STTH212U DIODE GEN PURP 1.2KV 2A SMB STMicroelectronics	3,556	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 1200 V	1200 V	2A	175°C (Max)	1.75 V @ 2 A
JANS1N6640 DIODE GEN PURP 50V 300MA DO204AH Microchip Technology	474	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/609	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 ns	100 nA @ 50 V	50 V	300mA	-65°C ~ 175°C	1 V @ 200 mA
SL44-E3/57T DIODE SCHOTTKY 40V 4A DO214AB Vishay General Semiconductor - Diodes Division	3,772	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	4A	-55°C ~ 125°C	440 mV @ 4 A
JANS1N3595US DIODE GEN PURP 200MA DO35 Microchip Technology	370	-	RFQ	Ficha técnica	Bulk	Military, MIL-S-19500-241	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	3 µs	1 nA @ 125 V	-	200mA (DC)	-65°C ~ 150°C	1 V @ 200 mA
FSV1045V DIODE SCHOTTKY 45V 10A TO277-3 onsemi	2,194	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	820pF @ 4V, 1MHz	-	220 µA @ 45 V	45 V	10A	-55°C ~ 150°C	440 mV @ 10 A