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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5617/TRRECTIFIER UFR,FRR Microchip Technology |
2,185 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
RD 2AV1DIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,751 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 1.55 V @ 1.2 A | |
|
|
VS-20ETF06THM3RECTIFIER DIODE 20A 600V TO-220A Vishay General Semiconductor - Diodes Division |
2,197 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A |
|
|
SD200SA30B.TPIV 30V IO 60A CHIP SIZE 200MIL SMC Diode Solutions |
3,732 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3300pF @ 5V, 1MHz | - | 6 mA @ 30 V | 30 V | 60A | -55°C ~ 150°C | 530 mV @ 60 A | |
|
UPR30/TR7DIODE GEN PURP 300V 2A POWERMITE Microchip Technology |
2,068 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
NRVTS15100PFST3GDIODE SCHOTTKY 100V 15A TO277-3 onsemi |
3,147 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1150pf @ 1V, 1MHz | - | 50 µA @ 100 V | 100 V | 15A | -55°C ~ 175°C | 810 mV @ 15 A | |
|
|
DMA30P1200HBPOWER DIODE DISCRETES-RECTIFIER IXYS |
3,530 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 11pF @ 400V, 1MHz | - | 40 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 1.26 V @ 30 A | |
|
|
RG 10V1DIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,207 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 1.8 V @ 1.5 A | |
|
DPG15I300PADIODE GEN PURP 300V 15A TO220AC IXYS |
2,489 | - |
RFQ |
Ficha técnica |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 1 µA @ 300 V | 300 V | 15A | -55°C ~ 175°C | 1.26 V @ 15 A |
|
|
SD200SA60B.TPIV 60V IO 60A CHIP SIZE 200MIL SMC Diode Solutions |
2,447 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2400pF @ 5V, 1MHz | - | 6 mA @ 60 V | 60 V | 60A | -55°C ~ 150°C | 680 mV @ 60 A | |
|
|
UPR40/TR7DIODE GEN PURP 400V 2A POWERMITE Microchip Technology |
3,615 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
VIT2080S-M3/4WDIODE SCHOTTKY 20A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
IDD10SG60CXTMA2DIODE SCHOTTKY 600V 10A TO252-3 Infineon Technologies |
2,826 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 290pF @ 1V, 1MHz | 0 ns | 90 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 2.1 V @ 10 A |
|
|
RU 20AV1DIODE GEN PURP 600V 1.5A AXIAL Sanken |
3,926 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1.5A | -40°C ~ 150°C | 1.1 V @ 1.5 A | |
|
1N4446DIODE GEN PURP 75V 200MA DO35 Microchip Technology |
3,152 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 25 nA @ 20 V | 75 V | 200mA | -65°C ~ 150°C | 1 V @ 20 mA | |
|
|
1N6677-1RECTIFIER DIODE Microchip Technology |
3,982 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
MBRM2H100T3GDIODE SCHOTTKY 100V 2A POWERMITE onsemi |
2,698 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 840 mV @ 2 A | |
|
ACGRAT102-HFDIODE GEN PURP 400V 1A 2010 Comchip Technology |
2,303 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | 8pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
PDS760Q-13DIODE SCHOTTKY 60V 7A POWERDI5 Diodes Incorporated |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 7A | -65°C ~ 150°C | 620 mV @ 7 A |
|
SE20FJ-M3/HDIODE GEN PURP 600V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
2,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 600 V | 600 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
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