Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IDH06SG60CXKSA1

IDH06SG60CXKSA1

DIODE SCHOTTKY 600V 6A TO220-2

Infineon Technologies
3,707 -

RFQ

IDH06SG60CXKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 2.3 V @ 6 A
IDH08SG60CXKSA1

IDH08SG60CXKSA1

DIODE SCHOTTKY 600V 8A TO220-2

Infineon Technologies
2,340 -

RFQ

IDH08SG60CXKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 240pF @ 1V, 1MHz 0 ns 70 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 2.1 V @ 8 A
IDV02S60CXKSA1

IDV02S60CXKSA1

DIODE SCHOTTKY 600V 2A TO220-2FP

Infineon Technologies
2,679 -

RFQ

IDV02S60CXKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 60pF @ 1V, 1MHz 0 ns 15 µA @ 600 V 600 V 2A (DC) -55°C ~ 175°C 1.9 V @ 2 A
IDV03S60CXKSA1

IDV03S60CXKSA1

DIODE SCHOTTKY 600V 3A TO220-2FP

Infineon Technologies
2,274 -

RFQ

IDV03S60CXKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 90pF @ 1V, 1MHz 0 ns 30 µA @ 600 V 600 V 3A (DC) -55°C ~ 175°C 1.9 V @ 3 A
IDH08SG60CXKSA2

IDH08SG60CXKSA2

DIODE SCHOTTKY 600V 8A TO220-2

Infineon Technologies
354 -

RFQ

IDH08SG60CXKSA2

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 240pF @ 1V, 1MHz 0 ns 70 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 2.1 V @ 8 A
D126A45CXPSA1

D126A45CXPSA1

DIODE GEN PURP 4.5KV 200A

Infineon Technologies
2,609 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - - 30 mA @ 4500 V 4500 V 200A -40°C ~ 160°C -
D126B45CXPSA1

D126B45CXPSA1

DIODE GEN PURP 4.5KV 200A

Infineon Technologies
2,745 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - - 30 mA @ 4500 V 4500 V 200A -40°C ~ 160°C -
D1481N58T

D1481N58T

DIODE GEN PURP 5.8KV 2200A

Infineon Technologies
2,679 -

RFQ

D1481N58T

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 50 mA @ 5800 V 5800 V 2200A -40°C ~ 160°C 1.8 V @ 2500 A
D8320N02TVFXPSA1

D8320N02TVFXPSA1

DIODE GEN PURP 200V 8320A

Infineon Technologies
2,204 -

RFQ

D8320N02TVFXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 100 mA @ 200 V 200 V 8320A -25°C ~ 150°C 795 mV @ 4000 A
D850N28TXPSA1

D850N28TXPSA1

DIODE GEN PURP 2.8KV 850A

Infineon Technologies
3,768 -

RFQ

D850N28TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 2800 V 2800 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D850N30TXPSA1

D850N30TXPSA1

DIODE GEN PURP 3KV 850A

Infineon Technologies
3,756 -

RFQ

D850N30TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 3000 V 3000 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D850N32TXPSA1

D850N32TXPSA1

DIODE GEN PURP 3.2KV 850A

Infineon Technologies
3,452 -

RFQ

D850N32TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 3200 V 3200 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D850N34TXPSA1

D850N34TXPSA1

DIODE GEN PURP 3.4KV 850A

Infineon Technologies
3,788 -

RFQ

D850N34TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 3400 V 3400 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D850N36TXPSA1

D850N36TXPSA1

DIODE GEN PURP 3.6KV 850A

Infineon Technologies
2,898 -

RFQ

D850N36TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 3600 V 3600 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D850N40TXPSA1

D850N40TXPSA1

DIODE GEN PURP 4KV 850A

Infineon Technologies
2,966 -

RFQ

D850N40TXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 50 mA @ 4000 V 4000 V 850A -40°C ~ 160°C 1.28 V @ 850 A
D56S45CXPSA1

D56S45CXPSA1

DIODE GEN PURP 4.5KV 102A

Infineon Technologies
2,271 -

RFQ

D56S45CXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - 3.3 µs 5 mA @ 4500 V 4500 V 102A -40°C ~ 125°C 4.5 V @ 320 A
D56S45CPRXPSA1

D56S45CPRXPSA1

DIODE RECTFIER FAST 4100V 160A

Infineon Technologies
2,450 -

RFQ

D56S45CPRXPSA1

Ficha técnica

Bulk RoHS - - Obsolete - - - - - - - -
D56U40CXPSA1

D56U40CXPSA1

DIODE RECTFIER FAST 4100V 160A

Infineon Technologies
2,106 -

RFQ

D56U40CXPSA1

Ficha técnica

Bulk RoHS - - Obsolete - - - - - - - -
D56U45CPRXPSA1

D56U45CPRXPSA1

DIODE RECTFIER FAST 4100V 160A

Infineon Technologies
3,977 -

RFQ

D56U45CPRXPSA1

Ficha técnica

Bulk RoHS - - Obsolete - - - - - - - -
D400K16BXPSA1

D400K16BXPSA1

DIODE GEN PURP 1.6KV 450A

Infineon Technologies
2,606 -

RFQ

D400K16BXPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - - 40 mA @ 1600 V 1600 V 450A -40°C ~ 180°C -
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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