Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BAS 52-02V E6433

BAS 52-02V E6433

DIODE SCHOTTKY 45V 750MA SC79-2

Infineon Technologies
3,115 -

RFQ

BAS 52-02V E6433

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 10pF @ 10V, 1MHz - 10 µA @ 45 V 45 V 750mA (DC) 150°C (Max) 600 mV @ 200 mA
BAT 54-02V E6327

BAT 54-02V E6327

DIODE SCHOTTKY 30V 200MA SC79-2

Infineon Technologies
2,385 -

RFQ

BAT 54-02V E6327

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA (DC) 150°C (Max) 800 mV @ 100 mA
BAT 54W E6327

BAT 54W E6327

DIODE SCHOTTKY 30V 200MA SOT323

Infineon Technologies
2,126 -

RFQ

BAT 54W E6327

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA (DC) 150°C (Max) 800 mV @ 100 mA
IDB06S60C

IDB06S60C

DIODE SCHOTTKY 600V 6A D2PAK

Infineon Technologies
153,293 -

RFQ

IDB06S60C

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 280pF @ 1V, 1MHz 0 ns 80 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 1.7 V @ 6 A
IDB10S60C

IDB10S60C

DIODE SILICON 600V 10A D2PAK

Infineon Technologies
3,289 -

RFQ

IDB10S60C

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 480pF @ 1V, 1MHz 0 ns 140 µA @ 600 V 600 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
IDD04SG60CXTMA1

IDD04SG60CXTMA1

DIODE SCHOTTKY 600V 5.6A TO252-3

Infineon Technologies
2,226 -

RFQ

IDD04SG60CXTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 80pF @ 1V, 1MHz 0 ns 25 µA @ 600 V 600 V 5.6A -55°C ~ 175°C 2.3 V @ 4 A
IDD05SG60CXTMA1

IDD05SG60CXTMA1

DIODE SCHOTTKY 600V 5A TO252-3

Infineon Technologies
2,352 -

RFQ

IDD05SG60CXTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 110pF @ 1V, 1MHz 0 ns 30 µA @ 600 V 600 V 5A (DC) -55°C ~ 175°C 2.3 V @ 5 A
IDD06SG60CXTMA1

IDD06SG60CXTMA1

DIODE SCHOTTKY 600V 6A TO252-3

Infineon Technologies
2,999 -

RFQ

IDD06SG60CXTMA1

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 2.3 V @ 6 A
IDD08SG60CXTMA1

IDD08SG60CXTMA1

DIODE SCHOTTKY 600V 8A TO252-3

Infineon Technologies
2,356 -

RFQ

IDD08SG60CXTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 240pF @ 1V, 1MHz 0 ns 70 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 2.1 V @ 8 A
IDD09SG60CXTMA1

IDD09SG60CXTMA1

DIODE SCHOTTKY 600V 9A TO252-3

Infineon Technologies
3,108 -

RFQ

IDD09SG60CXTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 280pF @ 1V, 1MHz 0 ns 80 µA @ 600 V 600 V 9A (DC) -55°C ~ 175°C 2.1 V @ 9 A
IDD10SG60CXTMA1

IDD10SG60CXTMA1

DIODE SCHOTTKY 600V 10A TO252-3

Infineon Technologies
2,588 -

RFQ

IDD10SG60CXTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 290pF @ 1V, 1MHz 0 ns 90 µA @ 600 V 600 V 10A (DC) -55°C ~ 175°C 2.1 V @ 10 A
IDD12SG60CXTMA1

IDD12SG60CXTMA1

DIODE SCHOTTKY 600V 12A TO252-3

Infineon Technologies
3,543 -

RFQ

IDD12SG60CXTMA1

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 310pF @ 1V, 1MHz 0 ns 100 µA @ 600 V 600 V 12A (DC) -55°C ~ 175°C 2.1 V @ 12 A
IDH02SG120XKSA1

IDH02SG120XKSA1

DIODE SCHOTTKY 1200V 2A TO220-2

Infineon Technologies
3,423 -

RFQ

IDH02SG120XKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 125pF @ 1V, 1MHz 0 ns 48 µA @ 1200 V 1200 V 2A (DC) -55°C ~ 175°C 1.8 V @ 2 A
IDC04S60CEX1SA1

IDC04S60CEX1SA1

DIODE SIC 600V 4A SAWN WAFER

Infineon Technologies
3,525 -

RFQ

IDC04S60CEX1SA1

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 4A (DC) -55°C ~ 175°C 1.9 V @ 4 A
IDC04S60CEX7SA1

IDC04S60CEX7SA1

DIODE GEN PURPOSE SAWN WAFER

Infineon Technologies
3,837 -

RFQ

IDC04S60CEX7SA1

Ficha técnica

Bulk RoHS - - Obsolete Surface Mount - - - - - - -
IDH05S120AKSA1

IDH05S120AKSA1

DIODE SCHOTTKY 1200V 5A TO220-2

Infineon Technologies
2,657 -

RFQ

IDH05S120AKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 250pF @ 1V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 175°C 1.8 V @ 5 A
IDC05S60CEX1SA1

IDC05S60CEX1SA1

DIODE SIC 600V 5A SAWN WAFER

Infineon Technologies
3,178 -

RFQ

IDC05S60CEX1SA1

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 240pF @ 1V, 1MHz 0 ns 70 µA @ 600 V 600 V 5A (DC) -55°C ~ 175°C 1.7 V @ 5 A
IDC08S60CEX1SA2

IDC08S60CEX1SA2

DIODE SIC 600V 8A SAWN WAFER

Infineon Technologies
3,853 -

RFQ

IDC08S60CEX1SA2

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 310pF @ 1V, 1MHz 0 ns 100 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 1.7 V @ 8 A
IDC08S60CEX1SA3

IDC08S60CEX1SA3

DIODE SIC 600V 8A SAWN WAFER

Infineon Technologies
2,594 -

RFQ

IDC08S60CEX1SA3

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 310pF @ 1V, 1MHz 0 ns 100 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 1.7 V @ 8 A
IDC08S60CEX7SA1

IDC08S60CEX7SA1

DIODE GEN PURPOSE SAWN WAFER

Infineon Technologies
2,607 -

RFQ

IDC08S60CEX7SA1

Ficha técnica

Bulk RoHS - - Obsolete Surface Mount - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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