Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SIDC06D120F6X1SA2

SIDC06D120F6X1SA2

DIODE GEN PURP 1.2KV 5A WAFER

Infineon Technologies
2,469 -

RFQ

SIDC06D120F6X1SA2

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 150°C 2.1 V @ 5 A
SIDC06D120H6X1SA4

SIDC06D120H6X1SA4

DIODE GEN PURP 1.2KV 7.5A WAFER

Infineon Technologies
2,518 -

RFQ

SIDC06D120H6X1SA4

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 7.5A (DC) -55°C ~ 150°C 1.6 V @ 7.5 A
SIDC06D60AC6X1SA1

SIDC06D60AC6X1SA1

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies
3,611 -

RFQ

SIDC06D60AC6X1SA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 20A (DC) -40°C ~ 175°C 1.95 V @ 20 A
SIDC06D60C6

SIDC06D60C6

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies
3,959 -

RFQ

SIDC06D60C6

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 20A (DC) -40°C ~ 175°C 1.95 V @ 20 A
SIDC06D60E6X1SA3

SIDC06D60E6X1SA3

DIODE GEN PURP 600V 10A WAFER

Infineon Technologies
2,716 -

RFQ

SIDC06D60E6X1SA3

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.25 V @ 10 A
SIDC06D60F6X1SA3

SIDC06D60F6X1SA3

DIODE GEN PURP 600V 15A WAFER

Infineon Technologies
3,972 -

RFQ

SIDC06D60F6X1SA3

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 150°C 1.6 V @ 15 A
SIDC07D60AF6X1SA1

SIDC07D60AF6X1SA1

DIODE GEN PURP 600V 22.5A WAFER

Infineon Technologies
3,024 -

RFQ

SIDC07D60AF6X1SA1

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 150°C 1.6 V @ 22.5 A
SIDC07D60E6X1SA1

SIDC07D60E6X1SA1

DIODE GEN PURP 600V 15A WAFER

Infineon Technologies
3,702 -

RFQ

SIDC07D60E6X1SA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 250 µA @ 600 V 600 V 15A (DC) -55°C ~ 150°C 1.25 V @ 15 A
SIDC07D60F6X1SA2

SIDC07D60F6X1SA2

DIODE GEN PURP 600V 22.5A WAFER

Infineon Technologies
3,133 -

RFQ

SIDC07D60F6X1SA2

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 150°C 1.6 V @ 22.5 A
SIDC08D120F6X1SA3

SIDC08D120F6X1SA3

DIODE GEN PURP 1.2KV 7A WAFER

Infineon Technologies
2,196 -

RFQ

SIDC08D120F6X1SA3

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 7A (DC) -55°C ~ 150°C 2.1 V @ 7 A
SIDC08D120H6X1SA1

SIDC08D120H6X1SA1

DIODE GEN PURP 1.2KV 10A WAFER

Infineon Technologies
3,537 -

RFQ

SIDC08D120H6X1SA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 150°C 1.6 V @ 10 A
SIDC08D60C6

SIDC08D60C6

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies
3,440 -

RFQ

SIDC08D60C6

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
SIDC08D60C6Y

SIDC08D60C6Y

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies
3,534 -

RFQ

SIDC08D60C6Y

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
SIDC09D60E6X1SA1

SIDC09D60E6X1SA1

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies
2,184 -

RFQ

SIDC09D60E6X1SA1

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 150 ns 27 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
SIDC09D60E6 UNSAWN

SIDC09D60E6 UNSAWN

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies
3,694 -

RFQ

SIDC09D60E6 UNSAWN

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 27 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
BAS40E6327HTSA1

BAS40E6327HTSA1

DIODE SCHOTTKY 40V 120MA SOT23-3

Infineon Technologies
64,651 -

RFQ

BAS40E6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 0V, 1MHz 100 ps 1 µA @ 30 V 40 V 120mA (DC) -55°C ~ 150°C 1 V @ 40 mA
BAS70E6327HTSA1

BAS70E6327HTSA1

DIODE SCHOTTKY 70V 70MA SOT23-3

Infineon Technologies
8,393 -

RFQ

BAS70E6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz 100 ps 100 nA @ 50 V 70 V 70mA (DC) -55°C ~ 125°C 1 V @ 15 mA
SIDC09D60E6YX1SA1

SIDC09D60E6YX1SA1

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies
2,524 -

RFQ

SIDC09D60E6YX1SA1

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 150 ns 27 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
SIDC09D60F6X1SA2

SIDC09D60F6X1SA2

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies
2,708 -

RFQ

SIDC09D60F6X1SA2

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.6 V @ 30 A
SIDC10D120H6X1SA5

SIDC10D120H6X1SA5

DIODE GEN PURP 1.2KV 15A WAFER

Infineon Technologies
2,744 -

RFQ

SIDC10D120H6X1SA5

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 15A (DC) -55°C ~ 150°C 1.6 V @ 15 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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