Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BAT 64-02W E6327

BAT 64-02W E6327

DIODE SCHOTTKY 40V 120MA SCD80-2

Infineon Technologies
2,094 -

RFQ

BAT 64-02W E6327

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 6pF @ 1V, 1MHz 5 ns 2 µA @ 30 V 40 V 120mA 150°C (Max) 750 mV @ 100 mA
IDH05S60CAKSA1

IDH05S60CAKSA1

DIODE SCHOTTKY 600V 5A TO220-2

Infineon Technologies
3,130 -

RFQ

IDH05S60CAKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 240pF @ 1V, 1MHz 0 ns 70 µA @ 600 V 600 V 5A (DC) -55°C ~ 175°C 1.7 V @ 5 A
IDH12S60CAKSA1

IDH12S60CAKSA1

DIODE SCHOTTKY 600V 12A TO220-2

Infineon Technologies
3,776 -

RFQ

IDH12S60CAKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 530pF @ 1V, 1MHz 0 ns 160 µA @ 600 V 600 V 12A (DC) -55°C ~ 175°C 1.7 V @ 12 A
IDH16S60CAKSA1

IDH16S60CAKSA1

DIODE SCHOTTKY 600V 16A TO220-2

Infineon Technologies
2,943 -

RFQ

IDH16S60CAKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 650pF @ 1V, 1MHz 0 ns 200 µA @ 600 V 600 V 16A (DC) -55°C ~ 175°C 1.7 V @ 16 A
MMBD914LT3HTMA1

MMBD914LT3HTMA1

DIODE GEN PURP 100V 250MA SOT23

Infineon Technologies
3,929 -

RFQ

MMBD914LT3HTMA1

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 4 ns 100 nA @ 75 V 100 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
SDB06S60

SDB06S60

DIODE SCHOTTKY 600V 6A D2PAK

Infineon Technologies
2,174 -

RFQ

SDB06S60

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 300pF @ 0V, 1MHz 0 ns 200 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 1.7 V @ 6 A
SDD04S60

SDD04S60

DIODE SCHOTTKY 600V 4A TO252-3

Infineon Technologies
3,940 -

RFQ

SDD04S60

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 150pF @ 0V, 1MHz 0 ns 200 µA @ 600 V 600 V 4A (DC) -55°C ~ 175°C 1.9 V @ 4 A
SDP10S30

SDP10S30

DIODE SCHOTTKY 300V 10A TO220-3

Infineon Technologies
3,292 -

RFQ

SDP10S30

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 600pF @ 0V, 1MHz 0 ns 200 µA @ 300 V 300 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
SDT10S60

SDT10S60

DIODE SCHOTTKY 600V 10A TO220-2

Infineon Technologies
3,158 -

RFQ

SDT10S60

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 350pF @ 0V, 1MHz 0 ns 350 µA @ 600 V 600 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
SIDC01D120H6

SIDC01D120H6

DIODE GEN PURP 1.2KV 600MA WAFER

Infineon Technologies
2,162 -

RFQ

SIDC01D120H6

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 600mA (DC) -55°C ~ 150°C 1.6 V @ 600 mA
SIDC01D60C6

SIDC01D60C6

DIODE GEN PURP WAFER

Infineon Technologies
2,646 -

RFQ

SIDC01D60C6

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - - - - -55°C ~ 150°C -
SIDC02D60C6X1SA4

SIDC02D60C6X1SA4

DIODE GEN PURP 600V 6A WAFER

Infineon Technologies
2,811 -

RFQ

SIDC02D60C6X1SA4

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 175°C 1.95 V @ 6 A
SIDC02D60F6X1SA1

SIDC02D60F6X1SA1

DIODE GEN PURP 600V 3A WAFER

Infineon Technologies
3,598 -

RFQ

SIDC02D60F6X1SA1

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 3A (DC) -40°C ~ 150°C 1.6 V @ 3 A
SIDC03D120F6X1SA1

SIDC03D120F6X1SA1

DIODE GEN PURP 1.2KV 2A WAFER

Infineon Technologies
3,062 -

RFQ

SIDC03D120F6X1SA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 2A (DC) -55°C ~ 150°C 2.1 V @ 2 A
SIDC03D120H6X1SA3

SIDC03D120H6X1SA3

DIODE GEN PURP 1.2KV 3A WAFER

Infineon Technologies
3,793 -

RFQ

SIDC03D120H6X1SA3

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 3A (DC) -55°C ~ 150°C 1.6 V @ 3 A
SIDC03D60C6X1SA2

SIDC03D60C6X1SA2

DIODE GEN PURP 600V 10A WAFER

Infineon Technologies
2,516 -

RFQ

SIDC03D60C6X1SA2

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -40°C ~ 175°C 1.95 V @ 10 A
SIDC03D60F6X1SA2

SIDC03D60F6X1SA2

DIODE GEN PURP 600V 6A WAFER

Infineon Technologies
3,656 -

RFQ

SIDC03D60F6X1SA2

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 150°C 1.6 V @ 6 A
SIDC04D60F6X1SA3

SIDC04D60F6X1SA3

DIODE GEN PURP 600V 9A WAFER

Infineon Technologies
2,822 -

RFQ

SIDC04D60F6X1SA3

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 9A (DC) -40°C ~ 150°C 1.6 V @ 9 A
SIDC05D60C6X1SA2

SIDC05D60C6X1SA2

DIODE GEN PURP 600V 15A WAFER

Infineon Technologies
2,707 -

RFQ

SIDC05D60C6X1SA2

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 175°C 1.95 V @ 15 A
SIDC06D120E6X1SA3

SIDC06D120E6X1SA3

DIODE GEN PURP 1.2KV 5A WAFER

Infineon Technologies
2,044 -

RFQ

SIDC06D120E6X1SA3

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 27 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 150°C 1.9 V @ 5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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