+86 075582561136
Subir BOM
Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAT 64-02W E6327DIODE SCHOTTKY 40V 120MA SCD80-2 Infineon Technologies |
2,094 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 6pF @ 1V, 1MHz | 5 ns | 2 µA @ 30 V | 40 V | 120mA | 150°C (Max) | 750 mV @ 100 mA | |
|
IDH05S60CAKSA1DIODE SCHOTTKY 600V 5A TO220-2 Infineon Technologies |
3,130 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 240pF @ 1V, 1MHz | 0 ns | 70 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
|
IDH12S60CAKSA1DIODE SCHOTTKY 600V 12A TO220-2 Infineon Technologies |
3,776 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 530pF @ 1V, 1MHz | 0 ns | 160 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A |
|
|
IDH16S60CAKSA1DIODE SCHOTTKY 600V 16A TO220-2 Infineon Technologies |
2,943 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 650pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
MMBD914LT3HTMA1DIODE GEN PURP 100V 250MA SOT23 Infineon Technologies |
3,929 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 100 nA @ 75 V | 100 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
SDB06S60DIODE SCHOTTKY 600V 6A D2PAK Infineon Technologies |
2,174 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 300pF @ 0V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
SDD04S60DIODE SCHOTTKY 600V 4A TO252-3 Infineon Technologies |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 150pF @ 0V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
SDP10S30DIODE SCHOTTKY 300V 10A TO220-3 Infineon Technologies |
3,292 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 600pF @ 0V, 1MHz | 0 ns | 200 µA @ 300 V | 300 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
SDT10S60DIODE SCHOTTKY 600V 10A TO220-2 Infineon Technologies |
3,158 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 350pF @ 0V, 1MHz | 0 ns | 350 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
SIDC01D120H6DIODE GEN PURP 1.2KV 600MA WAFER Infineon Technologies |
2,162 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 600mA (DC) | -55°C ~ 150°C | 1.6 V @ 600 mA | |
|
|
SIDC01D60C6DIODE GEN PURP WAFER Infineon Technologies |
2,646 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | - | - | - | -55°C ~ 150°C | - | |
|
|
SIDC02D60C6X1SA4DIODE GEN PURP 600V 6A WAFER Infineon Technologies |
2,811 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 6A (DC) | -40°C ~ 175°C | 1.95 V @ 6 A | |
|
|
SIDC02D60F6X1SA1DIODE GEN PURP 600V 3A WAFER Infineon Technologies |
3,598 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 3A (DC) | -40°C ~ 150°C | 1.6 V @ 3 A | |
|
|
SIDC03D120F6X1SA1DIODE GEN PURP 1.2KV 2A WAFER Infineon Technologies |
3,062 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 150°C | 2.1 V @ 2 A | |
|
|
SIDC03D120H6X1SA3DIODE GEN PURP 1.2KV 3A WAFER Infineon Technologies |
3,793 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 3A (DC) | -55°C ~ 150°C | 1.6 V @ 3 A | |
|
|
SIDC03D60C6X1SA2DIODE GEN PURP 600V 10A WAFER Infineon Technologies |
2,516 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -40°C ~ 175°C | 1.95 V @ 10 A | |
|
|
SIDC03D60F6X1SA2DIODE GEN PURP 600V 6A WAFER Infineon Technologies |
3,656 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 6A (DC) | -40°C ~ 150°C | 1.6 V @ 6 A | |
|
|
SIDC04D60F6X1SA3DIODE GEN PURP 600V 9A WAFER Infineon Technologies |
2,822 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 9A (DC) | -40°C ~ 150°C | 1.6 V @ 9 A | |
|
|
SIDC05D60C6X1SA2DIODE GEN PURP 600V 15A WAFER Infineon Technologies |
2,707 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 15A (DC) | -40°C ~ 175°C | 1.95 V @ 15 A | |
|
|
SIDC06D120E6X1SA3DIODE GEN PURP 1.2KV 5A WAFER Infineon Technologies |
2,044 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 150°C | 1.9 V @ 5 A |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
