Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N1188R DIODE GEN PURP REV 400V 35A DO5 GeneSiC Semiconductor	3,887	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
FR30J02 DIODE GEN PURP 600V 30A DO5 GeneSiC Semiconductor	2,329	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	600 V	30A	-40°C ~ 125°C	1 V @ 30 A
MBR8045R DIODE SCHOTTKY REV 45V DO5 GeneSiC Semiconductor	2,537	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky, Reverse Polarity	Active	Chassis, Stud Mount	-	-	1 mA @ 45 V	45 V	80A	-55°C ~ 150°C	650 mV @ 80 A
GB50SLT12-247 DIODE SCHOTTKY 1.2KV 50A TO247AC GeneSiC Semiconductor	3,008	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	2940pF @ 1V, 1MHz	0 ns	1 mA @ 1200 V	1200 V	50A	-55°C ~ 175°C	1.8 V @ 50 A
S300YR DIODE GEN PURP REV 1.6KV DO9 GeneSiC Semiconductor	3,477	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 1600 V	1600 V	300A	-60°C ~ 180°C	1.2 V @ 300 A
MBRH12040R DIODE SCHOTTKY 40V 120A D-67 GeneSiC Semiconductor	2,600	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky, Reverse Polarity	Active	Chassis Mount	-	-	1 mA @ 40 V	40 V	120A	-55°C ~ 150°C	700 mV @ 120 A
MBRH20045 DIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor	2,969	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis Mount	-	-	5 mA @ 20 V	45 V	200A	-	650 mV @ 200 A
1N1186A DIODE GEN PURP 200V 40A DO5 GeneSiC Semiconductor	3,669	-	RFQ	Ficha técnica	Bulk		RoHS	-	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	40A	-65°C ~ 190°C	1.1 V @ 40 A
FR40G02 DIODE GEN PURP 400V 40A DO5 GeneSiC Semiconductor	2,266	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 100 V	400 V	40A	-40°C ~ 125°C	1 V @ 40 A
FR70GR02 DIODE GEN PURP REV 400V 70A DO5 GeneSiC Semiconductor	100	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 100 V	400 V	70A	-40°C ~ 125°C	1.4 V @ 70 A
MBRH20045R DIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor	2,156	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky, Reverse Polarity	Active	Chassis Mount	-	-	1 mA @ 45 V	45 V	200A	-55°C ~ 150°C	700 mV @ 200 A
GD10MPS17H 1700V 10A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	3,031	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	721pF @ 1V, 1MHz	0 ns	5 µA @ 1700 V	1700 V	28A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
GC50MPS12-247 SIC DIODE 1200V 50A TO-247-2 GeneSiC Semiconductor	2,205	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	3263pF @ 1V, 1MHz	0 ns	40 µA @ 1200 V	1200 V	212A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
GB05SLT12-220 DIODE SCHOTTKY 1.2KV 5A TO220AC GeneSiC Semiconductor	2,604	-	RFQ		Bulk		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	260pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	5A	-55°C ~ 175°C	1.8 V @ 2 A
GB05SLT12-252 DIODE SILICON 1.2KV 5A TO252 GeneSiC Semiconductor	2,804	-	RFQ	Ficha técnica	Bulk		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	260pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	5A	-55°C ~ 175°C	1.8 V @ 2 A
GB20SLT12-247 DIODE SCHOTTKY 1.2KV 20A TO247AC GeneSiC Semiconductor	2,813	-	RFQ	Ficha técnica	Bulk		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	968pF @ 1V, 1MHz	0 ns	200 µA @ 1200 V	1200 V	20A	-55°C ~ 175°C	2 V @ 20 A
GB02SLT12-220 DIODE SCHOTTKY 1.2KV 2A TO220AC GeneSiC Semiconductor	3,321	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	138pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	2A	-55°C ~ 175°C	1.8 V @ 2 A
GB02SLT12-252 DIODE SIC SCHKY 1.2KV 2A TO252 GeneSiC Semiconductor	3,268	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	131pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
GB10SLT12-220 DIODE SCHOTTKY 1200V 10A TO220AC GeneSiC Semiconductor	3,947	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	520pF @ 1V, 1MHz	0 ns	40 µA @ 1200 V	1200 V	10A	-55°C ~ 175°C	1.8 V @ 10 A
GB10SLT12-252 DIODE SCHOTTKY 1.2KV 10A TO252 GeneSiC Semiconductor	2,260	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	520pF @ 1V, 1MHz	0 ns	250 µA @ 1200 V	1200 V	10A	-55°C ~ 175°C	2 V @ 10 A