+86 075582561136
Subir BOM
Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N8024-GADIODE SCHOTTKY 1.2KV 750MA TO257 GeneSiC Semiconductor |
2,570 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 66pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 750mA | -55°C ~ 250°C | 1.74 V @ 750 mA | |
|
MBRH30030RLDIODE SCHOTTKY 30V 300A D67 GeneSiC Semiconductor |
2,755 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 3 mA @ 30 V | 30 V | 300A | -55°C ~ 150°C | 580 mV @ 300 A | ||
|
|
1N8026-GADIODE SILICON 1.2KV 8A TO257 GeneSiC Semiconductor |
2,429 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 237pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 250°C | 1.6 V @ 2.5 A | |
|
|
MBRH30035LDIODE SCHOTTKY 35V 300A D67 GeneSiC Semiconductor |
3,934 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 3 mA @ 35 V | 35 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
|
1N8028-GADIODE SCHOTTKY 1.2KV 9.4A TO257 GeneSiC Semiconductor |
3,921 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 884pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 9.4A (DC) | -55°C ~ 250°C | 1.6 V @ 10 A | |
|
|
MBRH30035RLDIODE SCHOTTKY 35V 300A D67 GeneSiC Semiconductor |
2,185 | - |
RFQ |
Bulk | RoHS | - | Schottky | Obsolete | Chassis Mount | - | - | 3 mA @ 35 V | 35 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
|
1N8030-GADIODE SCHOTTKY 650V 750MA TO257 GeneSiC Semiconductor |
3,257 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 750mA | -55°C ~ 250°C | 1.39 V @ 750 mA | |
|
|
MBRH30040LDIODE SCHOTTKY 40V 300A D67 GeneSiC Semiconductor |
3,748 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 40 V | 40 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
1N8031-GADIODE SCHOTTKY 650V 1A TO276 GeneSiC Semiconductor |
2,282 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 1A | -55°C ~ 250°C | 1.5 V @ 1 A | |
|
|
MBRH30040RLDIODE SCHOTTKY 40V 300A D67 GeneSiC Semiconductor |
3,070 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 40 V | 40 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
|
1N8032-GADIODE SCHOTTKY 650V 2.5A TO257 GeneSiC Semiconductor |
2,194 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 274pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 2.5A | -55°C ~ 250°C | 1.3 V @ 2.5 A | |
|
|
MBRH30045LDIODE SCHOTTKY 45V 300A D67 GeneSiC Semiconductor |
2,373 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 45 V | 45 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
|
1N8033-GADIODE SCHOTTKY 650V 4.3A TO276 GeneSiC Semiconductor |
2,799 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 274pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 4.3A (DC) | -55°C ~ 250°C | 1.65 V @ 5 A | |
|
|
MBRH30045RLDIODE SCHOTTKY 45V 300A D67 GeneSiC Semiconductor |
2,243 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 45 V | 45 V | 300A | -55°C ~ 150°C | 600 mV @ 300 A | ||
|
|
1N8034-GADIODE SCHOTTKY 650V 9.4A TO257 GeneSiC Semiconductor |
3,983 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 1107pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 9.4A (DC) | -55°C ~ 250°C | 1.34 V @ 10 A | |
|
MURH7005DIODE GEN PURP 50V 70A D-67 GeneSiC Semiconductor |
2,635 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 75 ns | 25 µA @ 50 V | 50 V | 70A | -55°C ~ 150°C | 1 V @ 70 A | |
|
|
1N8035-GADIODE SCHOTTKY 650V 14.6A TO276 GeneSiC Semiconductor |
3,299 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 1107pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 14.6A (DC) | -55°C ~ 250°C | 1.5 V @ 15 A | ||
|
|
MURH7005RDIODE GEN PURP 50V 70A D-67 GeneSiC Semiconductor |
3,712 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 75 ns | 25 µA @ 50 V | 50 V | 70A | -55°C ~ 150°C | 1 V @ 70 A | |
|
GB01SLT12-220DIODE SCHOTTKY 1.2KV 1A TO220AC GeneSiC Semiconductor |
3,180 | - |
RFQ |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 69pF @ 1V, 1MHz | 0 ns | 2 µA @ 1200 V | 1200 V | 1A | -55°C ~ 175°C | 1.8 V @ 1 A | ||
|
1N1184DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor |
2,181 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 35A | -65°C ~ 190°C | 1.2 V @ 35 A |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
