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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
10A05 STD 10A, CASE TYPE: D6 EIC SEMICONDUCTOR INC.	3,200	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	10A	-65°C ~ 150°C	1 V @ 10 A
MR754T/R DIODE GEN PURP 400V 6A D6 EIC SEMICONDUCTOR INC.	2,400	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	25 µA @ 400 V	400 V	6A	-65°C ~ 175°C	900 mV @ 6 A
SF16-BULK SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	16,800	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
HER503BULK DIODE GEN PURP 200V 5A DO201AD EIC SEMICONDUCTOR INC.	3,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	5A	-65°C ~ 150°C	1.1 V @ 5 A
AR3504 DIODE GEN PURP 400V 35A MICRODE EIC SEMICONDUCTOR INC.	2,000	-	RFQ	Ficha técnica	Bag	Automotive	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	5 µA @ 400 V	400 V	35A	-65°C ~ 175°C	1.1 V @ 35 A
SB3B0-T/R SCHOTTKY BARRIER RECTIFIER DIODE EIC SEMICONDUCTOR INC.	3,750	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 100 V	100 V	3A	-65°C ~ 150°C	790 mV @ 3 A
HER107BULK DIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC.	15,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
HER104BULK DIODE GEN PURP 300V 1A DO41 EIC SEMICONDUCTOR INC.	10,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 300 V	300 V	1A	-65°C ~ 150°C	1.1 V @ 1 A
HER105BULK DIODE GEN PURP 400V 1A DO41 EIC SEMICONDUCTOR INC.	9,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-65°C ~ 150°C	1.1 V @ 1 A
FR307BULK DIODE GEN PURP 1000V 3A DO201AD EIC SEMICONDUCTOR INC.	8,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	500 ns	10 µA @ 1000 V	1000 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
HER302BULK DIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC.	7,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
HER301BULK DIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
BY399 FR 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC.	3,500	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	250 ns	10 µA @ 800 V	800 V	3A	-65°C ~ 150°C	1.25 V @ 3 A
HER108BULK DIODE GEN PURP 1000V 1A DO41 EIC SEMICONDUCTOR INC.	2,500	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
HER304BULK DIODE GEN PURP 300V 3A DO201AD EIC SEMICONDUCTOR INC.	8,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
SR1R FAST RECOVERY RECTIFIER DIODES; EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	5pF @ 4V, 1MHz	200 ns	5 µA @ 2000 V	2000 V	500mA	-40°C ~ 150°C	3 V @ 500 mA
MR760 AUTOMOTIVE RECTIFIER 22A,CASE TY EIC SEMICONDUCTOR INC.	550	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	25 µA @ 1000 V	1000 V	22A	-65°C ~ 175°C	900 mV @ 6 A
MR850BULK DIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC.	1,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	150 ns	10 µA @ 50 V	50 V	3A	-65°C ~ 150°C	1.25 V @ 3 A
MR854BULK DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	1,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	150 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.25 V @ 3 A
1N5817BULK DIODE SCHOTTKY 20V 1A DO41 EIC SEMICONDUCTOR INC.	1,000	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	1A	-65°C ~ 125°C	450 mV @ 1 A