Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N5401T/R

1N5401T/R

STD 3A, CASE TYPE: DO-201AD

EIC SEMICONDUCTOR INC.
45,000 -

RFQ

1N5401T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A (DC) -65°C ~ 175°C 950 mV @ 3 A
1N5402T/R

1N5402T/R

STD 3A, CASE TYPE: DO-201AD

EIC SEMICONDUCTOR INC.
23,750 -

RFQ

1N5402T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A (DC) -65°C ~ 175°C 950 mV @ 3 A
DR204T/R

DR204T/R

DIODE GEN PURP 400V 2A DO15

EIC SEMICONDUCTOR INC.
15,000 -

RFQ

DR204T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 75pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 2A (DC) -65°C ~ 175°C 1 V @ 2 A
BYV96E T/R

BYV96E T/R

DIODE AVALANCHE 1000V 1.5A DO15

EIC SEMICONDUCTOR INC.
18,000 -

RFQ

BYV96E T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 5 µA @ 1000 V 1000 V 1.5A 175°C 1.6 V @ 1.5 A
DR206T/R

DR206T/R

DIODE GEN PURP 600V 2A DO15

EIC SEMICONDUCTOR INC.
9,000 -

RFQ

DR206T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 75pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 2A (DC) -65°C ~ 175°C 1 V @ 2 A
FR205T/R

FR205T/R

DIODE GEN PURP 600V 2A DO15

EIC SEMICONDUCTOR INC.
9,000 -

RFQ

FR205T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 10 µA @ 600 V 600 V 2A -65°C ~ 150°C 1.3 V @ 2 A
1N4005T/R

1N4005T/R

STD 1A, CASE TYPE: DO-41

EIC SEMICONDUCTOR INC.
75,000 -

RFQ

1N4005T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
HER104T/R

HER104T/R

DIODE GEN PURP 300V 1A DO41

EIC SEMICONDUCTOR INC.
5,000 -

RFQ

HER104T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -65°C ~ 150°C 1.1 V @ 1 A
1N4006T/R

1N4006T/R

STD 1A, CASE TYPE: DO-41

EIC SEMICONDUCTOR INC.
40,000 -

RFQ

1N4006T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
MURA110

MURA110

DIODE GEN PURP 100V 2A SMA

EIC SEMICONDUCTOR INC.
4,500 -

RFQ

MURA110

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 100 V 100 V 2A -65°C ~ 175°C 875 mV @ 1 A
FR102T/R

FR102T/R

DIODE GEN PURP 100V 1A DO41

EIC SEMICONDUCTOR INC.
25,000 -

RFQ

FR102T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 1.3 V @ 1 A
BY550-1000G

BY550-1000G

DIODE GEN PURP 1000V 5A DO201AD

EIC SEMICONDUCTOR INC.
5,150 -

RFQ

BY550-1000G

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz - 20 µA @ 1000 V 1000 V 5A (DC) -65°C ~ 175°C 1.1 V @ 5 A
1N4004BULK

1N4004BULK

STD 1A, CASE TYPE: DO-41

EIC SEMICONDUCTOR INC.
38,000 -

RFQ

1N4004BULK

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N914T/R

1N914T/R

DIODE GEN PURP 75V 75MA DO35

EIC SEMICONDUCTOR INC.
10,000 -

RFQ

1N914T/R

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 75 V 75mA -65°C ~ 175°C 1 V @ 10 mA
1N5400T/R

1N5400T/R

STD 3A, CASE TYPE: DO-201AD

EIC SEMICONDUCTOR INC.
10,000 -

RFQ

1N5400T/R

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 3A (DC) -65°C ~ 175°C 950 mV @ 3 A
1N5818T/R

1N5818T/R

DIODE SCHOTTKY 30V 1A DO41

EIC SEMICONDUCTOR INC.
5,000 -

RFQ

1N5818T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 1A -65°C ~ 125°C 550 mV @ 1 A
FR307T/R

FR307T/R

DIODE GEN PURP 1000V 3A DO201AD

EIC SEMICONDUCTOR INC.
10,000 -

RFQ

FR307T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 500 ns 10 µA @ 1000 V 1000 V 3A -65°C ~ 150°C 1.3 V @ 3 A
SF28-T/R

SF28-T/R

SUPER FAST RECOVERY RECTIFIER DI

EIC SEMICONDUCTOR INC.
6,000 -

RFQ

SF28-T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 20 µA @ 800 V 800 V 2A -65°C ~ 150°C 4 V @ 2 A
SK15

SK15

SCHOTTKY BARRIER RECTIFIER DIODE

EIC SEMICONDUCTOR INC.
5,000 -

RFQ

SK15

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 50 V 50 V 1A -40°C ~ 125°C 500 mV @ 1 A
HER302T/R

HER302T/R

DIODE GEN PURP 100V 3A DO201AD

EIC SEMICONDUCTOR INC.
5,000 -

RFQ

HER302T/R

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -65°C ~ 150°C 1.1 V @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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