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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYV26E DIODE AVALANCHE 1000V 1A DO41 EIC SEMICONDUCTOR INC.	1,000	-	RFQ	Ficha técnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	75 ns	5 µA @ 1000 V	1000 V	1A	-65°C ~ 175°C	2.5 V @ 1 A
HER103BULK DIODE GEN PURP 200V 1A DO41 EIC SEMICONDUCTOR INC.	1,000	-	RFQ	Ficha técnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 150°C	1.1 V @ 1 A
BY299BULK DIODE GEN PURP 800V 2A DO15 EIC SEMICONDUCTOR INC.	500	-	RFQ	Ficha técnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	250 ns	10 µA @ 800 V	800 V	2A	-50°C ~ 125°C	1.3 V @ 2 A
SN1K REC 1 A, CASE TYPE SMA EIC SEMICONDUCTOR INC.	2,899	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	30pF @ 4V, 1MHz	2 µs	2 µA @ 800 V	800 V	1A (DC)	-65°C ~ 175°C	1 V @ 1 A
SB390 SKY 3A, CASE TYPE: DO-201AD/SMC EIC SEMICONDUCTOR INC.	3,616	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 500 V	90 V	3A	-65°C ~ 150°C	790 mV @ 3 A
FR301T/R DIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 50 V	50 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
FR302T/R DIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 100 V	100 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
HER108T/R DIODE GEN PURP 1000V 1A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
BY255 STD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC.	3,750	-	RFQ	Ficha técnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	-	20 µA @ 1300 V	1300 V	3A (DC)	-65°C ~ 175°C	1.1 V @ 3 A
GN2MT/R DIODE GEN PURP 1000V 2A SMA EIC SEMICONDUCTOR INC.	3,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	75pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	2A	-65°C ~ 150°C	1 V @ 2 A
MR850T/R DIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC.	1,250	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	150 ns	10 µA @ 50 V	50 V	3A	-65°C ~ 150°C	1.25 V @ 3 A
MR854T/R DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	1,250	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	150 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.25 V @ 3 A
1N4006BULK STD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC.	48,000	-	RFQ	Ficha técnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 800 V	800 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
1N4005BULK STD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC.	7,000	-	RFQ	Ficha técnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 600 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
1N4007C.B.O. STD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 1000 V	1000 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
FR303T/R DIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 200 V	200 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
SN1P SILICON RECITIFIER DIODE; CASE T EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	36pF @ 4V, 1MHz	-	5 µA @ 1600 V	1600 V	1A	-40°C ~ 150°C	2.2 V @ 1 A
SS1D SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	50pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 150°C	950 mV @ 1 A
FR304T/R DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	3,750	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
FR305T/R DIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC.	11,250	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	250 ns	10 µA @ 600 V	600 V	3A	-65°C ~ 150°C	1.3 V @ 3 A