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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S2A-E3/52TDIODE GEN PURP 50V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
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RGL41J-E3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,976 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYM11-1000-E3/97DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,182 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-EPU3006HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,335 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
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BYM11-400-E3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,668 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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V3P6-M3/84ADIODE SCHOTTKY 60V 2.4A DO220AA Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.4A (DC) | -55°C ~ 150°C | 630 mV @ 3 A |
|
BAS281-GS18DIODE SCHOTTKY 40V 30MA SOD80 Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 200 V | 40 V | 30mA | 125°C (Max) | 1 V @ 15 mA |
|
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VSSB420S-M3/5BTDIODE SCHOTTKY 200V 1.8A DO214AA Vishay General Semiconductor - Diodes Division |
3,084 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 150 µA @ 200 V | 200 V | 1.8A (DC) | -40°C ~ 150°C | 1.9 V @ 4 A |
|
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BYM10-200-E3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,559 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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BYM10-600-E3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,994 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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BYM10-800-E3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,855 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
SSA24HE3_A/IDIODE SCHOTTKY 40V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,291 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 490 mV @ 2 A |
|
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B230LA-E3/61TDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,396 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
|
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MURS160-E3/5BTDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
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GL41YHE3/97DIODE GEN PURP 1.6KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,054 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1600 V | 1600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
LL42-GS18DIODE SCHOTTKY 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,777 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | 125°C (Max) | 650 mV @ 50 mA |
|
SS2FN6HM3/IDIODE SCHOTTKY 60V 2A DO219AB Vishay General Semiconductor - Diodes Division |
3,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 100pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A |
|
VS-45APS16L-M3RECTIFIER DIODE 45A 1600V TO-247 Vishay General Semiconductor - Diodes Division |
3,038 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 45A | -40°C ~ 150°C | 1.16 V @ 45 A | |
|
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VS-41HFR160MDIODE GEN PURP 1.6KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
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VS-45EPS12L-M3RECTIFIER DIODE 45A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,763 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A |
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