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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ES1C-E3/61TDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,582 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
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1N4002E-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,655 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SL13-E3/5ATDIODE SCHOTTKY 30V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1.5A | -55°C ~ 125°C | 445 mV @ 1 A | |
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1N4003E-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,753 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
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1N4004E-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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1N4001E-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
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SS1FH6HM3/HDIODE SCHOTTKY 60V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,790 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 700 mV @ 1 A |
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1N4005E-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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BYG20D-E3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
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VS-20ETF12STRL-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,332 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
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BYG20J-E3/TR3DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
3,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
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VS-HFA25TB60SHM3DIODE GEN PURP 600V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,310 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
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VS-20ETF10STRR-M3DIODE GEN PURP 1KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,849 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
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VS-85HFL10S02DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,314 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 85A | -40°C ~ 125°C | - | |
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SS3P6HM3/84ADIODE SCHOTTKY 60V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,558 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 780 mV @ 3 A |
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1N5399GP-E3/73DIODE GEN PURP 1KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
3,168 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A | |
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V3P6L-M3/HSCHOTTKY RECTIFIER 3A 60V SMP Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 450pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.3A | -40°C ~ 150°C | 450 mV @ 1.5 A |
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SS3P3HM3/84ADIODE SCHOTTKY 30V 3A DO220AA Vishay General Semiconductor - Diodes Division |
3,583 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A |
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SE20PJ-M3/84ADIODE GEN PURP 600V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,787 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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SS1FL3-M3/HDIODE SCHOTTKY 30V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
2,408 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
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