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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-85HFL100S05DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 1000 V | 1000 V | 85A | -40°C ~ 125°C | - | |
|
GPP20G-E3/73DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,239 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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VS-85HFL60S05DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,427 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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GPP20K-E3/73DIODE GEN PURP 800V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,419 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
VS-20ETF04-M3DIODE GEN PURP 400V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,324 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
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VS-20ETF06-M3DIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,464 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
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SS26S-M3/5ATDIODE SCHOTTKY 2A 60V DO-214AC Vishay General Semiconductor - Diodes Division |
2,644 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 750 mV @ 2 A | |
|
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SS26S-M3/61TDIODE SCHOTTKY 2A 60V DO-214AC Vishay General Semiconductor - Diodes Division |
2,887 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A | |
|
VS-T70HF10DIODE GEN PURP 100V 70A D-55 Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 100 V | 100 V | 70A | - | - | |
|
VS-150UR100DDIODE GEN PURP 1KV 150A DO205 Vishay General Semiconductor - Diodes Division |
3,356 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 15 mA @ 1000 V | 1000 V | 150A | -40°C ~ 180°C | 1.47 V @ 600 A | |
|
VS-20ETF12-M3DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,311 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
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VS-T70HFL20S02DIODE GEN PURP 200V 70A D-55 Vishay General Semiconductor - Diodes Division |
2,865 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 70A | - | - | |
|
VS-243NQ100PBFDIODE SCHOTTKY 100V 240A D-67 Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 5500pF @ 5V, 1MHz | - | 6 mA @ 100 V | 100 V | 240A | -55°C ~ 175°C | 950 mV @ 240 A | |
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VS-20ETF02-M3DIODE GEN PURP 200V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,248 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
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VS-20ETF08-M3DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,505 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
VS-85HF140MDIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,793 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
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VS-20ETF10-M3DIODE GEN PURP 1KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
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VS-85HF160MDIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-C4PU6006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,361 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
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VS-85HFR140MDIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A |
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