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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYW56-TAPDIODE AVALANCHE 1KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,162 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
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BY268TRDIODE GEN PURP 1.4KV 800MA SOD57 Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 2 µA @ 1400 V | 1400 V | 800mA | -55°C ~ 150°C | 1.25 V @ 400 mA | |
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V8PM15HM3/HDIODE SCHOTTKY 8A 150V SMPC Vishay General Semiconductor - Diodes Division |
3,309 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
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VS-20ETF12FP-M3DIODE GEN PURP 1.2KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,632 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | ||
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VS-20ETF02STRL-M3DIODE GEN PURP 200V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,387 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
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VS-20ETF10FP-M3DIODE GEN PURP 1KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | ||
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VS-20ETF06STRR-M3DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,877 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
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VS-87HF40DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,657 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-87HFR40DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-35APF06L-M3RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,932 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A | |
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VS-APU6006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,612 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 2 V @ 30 A |
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VS-40HFL20S02DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,242 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
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VS-35EPF06L-M3RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A | |
|
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VS-1N1190ADIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 600 V | 600 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
|
USB260-M3/52TDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,078 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A | |
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SB540-E3/54DIODE SCHOTTKY 40V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
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VS-E5TH3012-M330A, 1200V, "X" SERIES FRED PT I Vishay General Semiconductor - Diodes Division |
3,544 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 58 ns | 50 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.5 V @ 30 A | |
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SS26HE3_A/HDIODE SCHOTTKY 60V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,668 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A |
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ES2GHE3_A/HDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,160 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
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UF5404-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
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