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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-71HF20DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 15 mA @ 200 V | 200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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VS-85HFLR60S02DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,867 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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SS2PH10-M3/84ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
1,080 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
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VS-70HFL20S05DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,644 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 200 V | 200 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
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VS-71HFR20DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,989 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 15 mA @ 200 V | 200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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BAT54WS-E3-08DIODE SCHOTTKY 30V 200MA SOD323 Vishay General Semiconductor - Diodes Division |
3,055 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
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V1PM12HM3/HDIODE SCHOTTKY 120V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
2,661 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 100pF @ 4V, 1MHz | - | 50 µA @ 120 V | 120 V | 1A | -40°C ~ 175°C | 870 mV @ 1 A |
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V1PM15HM3/HDIODE SCHOTTKY 150V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
3,073 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 50 µA @ 150 V | 150 V | 1A | -40°C ~ 175°C | 1.21 V @ 1 A |
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B140-E3/5ATDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 520 mV @ 1 A | |
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VS-87HF120DIODE GEN PURP 1.2KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,169 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-87HFR120DIODE GEN PURP 1.2KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,955 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 85A | -55°C ~ 150°C | 1.2 V @ 267 A |
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VS-45EPS16L-M3RECTIFIER DIODE 45A 1600V TO-247 Vishay General Semiconductor - Diodes Division |
3,552 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 45A | -40°C ~ 150°C | 1.16 V @ 45 A | |
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VS-87HFR10DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,480 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 100 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-40HFLR40S05DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,460 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
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V2PL45-M3/HDIODE SCHOTTKY 45V 2A MICROSMP Vishay General Semiconductor - Diodes Division |
2,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 350 µA @ 45 V | 45 V | 2A | -40°C ~ 150°C | 560 mV @ 2 A |
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RGP02-20E-E3/54DIODE GEN PURP 2KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,165 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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RGP02-15E-E3/54DIODE GEN PURP 1.5KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,885 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1500 V | 1500 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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SS210-E3/52TDIODE SCHOTTKY 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,712 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
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1N5061TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
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1N5062TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,347 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A |
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