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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIT2080S-M3/4WDIODE SCHOTTKY 20A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
SE20FJ-M3/HDIODE GEN PURP 600V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
2,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 600 V | 600 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
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SE20FD-M3/HDIODE GEN PURP 200V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
1,948 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 200 V | 200 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
MURS320-E3/57TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 875 mV @ 3 A | |
|
V10P10-M3/86ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,008 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 680 mV @ 10 A |
|
|
V12P12-M3/86ADIODE SCHOTTKY 120V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,704 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 12A | -40°C ~ 150°C | 800 mV @ 12 A |
|
|
VS-30BQ060-M3/9ATDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 5V, 1MHz | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A | |
|
VF20150SG-M3/4WDIODE SCHOTTKY 20A 150V ITO220AB Vishay General Semiconductor - Diodes Division |
2,314 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
VS-50EPU12LHN3DIODE GEN PURP 1.2KV 50A TO247AD Vishay General Semiconductor - Diodes Division |
3,757 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 262 ns | 330 µA @ 1200 V | 1200 V | 50A | -55°C ~ 175°C | 2.55 V @ 50 A |
|
|
V10PL45-M3/87ADIODE SCHOTTKY 45V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,735 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 mA @ 45 V | 45 V | 6A | -40°C ~ 150°C | 520 mV @ 10 A | |
|
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VIT3060G-E3/4WDIODE SCHOTTKY 60V 15A TO262AA Vishay General Semiconductor - Diodes Division |
2,766 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 850 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 730 mV @ 15 A | |
|
|
V12P10-M3/86ADIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,042 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 700 mV @ 12 A |
|
|
SL44-E3/57TDIODE SCHOTTKY 40V 4A DO214AB Vishay General Semiconductor - Diodes Division |
3,772 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 4A | -55°C ~ 125°C | 440 mV @ 4 A | |
|
VBT1045BP-M3/8WDIODE SCHOTTKY 10A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
3,167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 680 mV @ 10 A | |
|
VS-20ETS16-M3DIODE GEN PURP 1.6KV 20A TO220AB Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-75EPU12LHN3DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division |
2,939 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 265 ns | 420 µA @ 1200 V | 1200 V | 75A | -55°C ~ 175°C | 2.55 V @ 75 A |
|
|
VBT1045BP-M3/4WDIODE SCHOTTKY 10A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,948 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 10 ns | 500 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 680 mV @ 10 A | |
|
P600M-E3/54DIODE GEN PURP 1KV 6A P600 Vishay General Semiconductor - Diodes Division |
2,188 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 1000 V | 1000 V | 6A | -50°C ~ 150°C | 1 V @ 6 A | |
|
|
VBT5200-E3/8WDIODE SCHOTTKY 5A 200V TO-263AB Vishay General Semiconductor - Diodes Division |
3,007 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A | |
|
|
VBT5200-E3/4WDIODE SCHOTTKY 5A 200V TO-263AB Vishay General Semiconductor - Diodes Division |
3,978 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A |
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