Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-6FR20 DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division	3,579	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 200 V	200 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
VS-8EWF12S-M3 DIODE GEN PURP 1.2KV 8A TO252 Vishay General Semiconductor - Diodes Division	3,436	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	270 ns	100 µA @ 1200 V	1200 V	8A	-40°C ~ 150°C	1.3 V @ 8 A
VS-90EPS12L-M3 NEW INPUT DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	3,461	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	90A	-40°C ~ 150°C	1.2 V @ 90 A
SS1FL4-M3/H DIODE SCHOTTKY 40V 1A DO-219AB Vishay General Semiconductor - Diodes Division	2,756	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	115pF @ 4V, 1MHz	-	200 µA @ 40 V	40 V	1A	-55°C ~ 150°C	500 mV @ 1 A
V10150S-M3/4W DIODE SCHOTTKY 10A 150V TO-220AB Vishay General Semiconductor - Diodes Division	2,729	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	150 µA @ 150 V	150 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
VS-6F80 DIODE GEN PURP 800V 6A DO203AA Vishay General Semiconductor - Diodes Division	2,863	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	12 mA @ 800 V	800 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
VS-12TQ035-M3 DIODE SCHOTTKY 15A 35V TO-220AC Vishay General Semiconductor - Diodes Division	2,059	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	900pF @ 5V, 1MHz	-	1.75 mA @ 35 V	35 V	15A	-55°C ~ 150°C	710 mV @ 30 A
VF20120SG-E3/4W DIODE SCHOTTKY 120V 20A ITO220AB Vishay General Semiconductor - Diodes Division	3,352	-	RFQ	Ficha técnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	250 µA @ 120 V	120 V	20A	-40°C ~ 150°C	1.33 V @ 20 A
VS-6F40 DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division	3,042	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	12 mA @ 400 V	400 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
VS-12TQ040-M3 DIODE SCHOTTKY 40V 15A TO220AC Vishay General Semiconductor - Diodes Division	3,778	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	900pF @ 5V, 1MHz	-	1.75 mA @ 40 V	40 V	15A	-55°C ~ 150°C	710 mV @ 30 A
VIT2060G-M3/4W DIODE SCHOTTKY 60V 10A TO262AA Vishay General Semiconductor - Diodes Division	3,385	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	700 µA @ 60 V	60 V	10A	-55°C ~ 150°C	900 mV @ 10 A
VS-12FL10S02 DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	2,094	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	50 µA @ 100 V	100 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
VS-30EPH06HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	2,885	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	31 ns	50 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.6 V @ 30 A
VS-6FR40 DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division	3,020	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 400 V	400 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
VS-8ETU04STRL-M3 DIODE GEN PURP 400V 8A TO262 Vishay General Semiconductor - Diodes Division	3,162	-	RFQ	Ficha técnica	Tape & Reel (TR)	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	10 µA @ 400 V	400 V	8A	-65°C ~ 175°C	1.3 V @ 8 A
VS-95PF40T DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division	2,477	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	-	400 V	95A	-55°C ~ 180°C	1.4 V @ 267 A
VS-90EPS08L-M3 RECTIFIER DIODE 90A 800V TO-247A Vishay General Semiconductor - Diodes Division	2,604	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 800 V	800 V	90A	-40°C ~ 150°C	1.2 V @ 90 A
VS-8ETU04STRR-M3 DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division	3,399	-	RFQ	Ficha técnica	Tape & Reel (TR)	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	10 µA @ 400 V	400 V	8A	-65°C ~ 175°C	1.3 V @ 8 A
VS-95PFR40T DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division	3,467	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	-	400 V	95A	-55°C ~ 180°C	1.4 V @ 267 A
VS-4EWH02FNHM3 DIODE GEN PURP 200V 4A TO252 Vishay General Semiconductor - Diodes Division	3,138	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	20 ns	3 µA @ 200 V	200 V	4A	-65°C ~ 175°C	950 mV @ 4 A