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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-5EWL06FNTRR-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,797 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 145 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.2 V @ 5 A |
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V10PM12HM3_A/HDIODE SCHOTTKY 120V 3.9A TO277A Vishay General Semiconductor - Diodes Division |
3,486 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 3.9A | -40°C ~ 150°C | 830 mV @ 10 A |
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VS-5EWX06FNTRL-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
2,520 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 480 ns | 20 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 2.9 V @ 5 A | |
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V10PM12HM3_A/IDIODE SCHOTTKY 120V 3.9A TO277A Vishay General Semiconductor - Diodes Division |
3,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 3.9A | -40°C ~ 150°C | 830 mV @ 10 A |
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VS-8ETX06SPBFDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,925 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 17 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
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S2B-E3/5BTDIODE GEN PURP 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,168 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
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MB10H100HE3_B/IDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
374 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A |
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VS-2ENH01HM3/84AFRED PT RECTIFIER AEC-Q101 SMP Vishay General Semiconductor - Diodes Division |
2,970 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1 V @ 2 A |
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MPG06M-E3/73DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,934 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-10ETS08STRL-M3DIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division |
425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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VS-1ENH02HM3/84AFRED PT RECTIFIER AEC-Q101 SMP Vishay General Semiconductor - Diodes Division |
2,884 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 920 mV @ 1 A |
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VS-5EWX06FNTRR-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,749 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 20 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 2.9 V @ 5 A |
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V15PM45-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,735 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3000pF @ 4V, 1MHz | - | 700 µA @ 45 V | 45 V | 15A | -40°C ~ 175°C | 600 mV @ 15 A |
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VS-8EWS16STRL-M3DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,105 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
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VS-8EWS16STR-M3DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,916 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
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VS-25FR20DIODE GEN PURP 200V 25A DO203AA Vishay General Semiconductor - Diodes Division |
2,362 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 200 V | 200 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
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VS-MBR1635PBFDIODE SCHOTTKY 35V 16A TO220AC Vishay General Semiconductor - Diodes Division |
570 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
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VS-E5TX3012-N3DIODE FREDS 1200V 30A TO-220 Vishay General Semiconductor - Diodes Division |
546 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 50 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 3.15 V @ 30 A |
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VS-10BQ100-M3/5BTDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
110,860 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A | |
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MPG06J-E3/54DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
1,836 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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