Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-30EPF02-M3

VS-30EPF02-M3

DIODE GEN PURP 200V 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,731 -

RFQ

VS-30EPF02-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 100 µA @ 200 V 200 V 30A -40°C ~ 150°C 1.41 V @ 30 A
V8P45HM3_A/H

V8P45HM3_A/H

DIODE SCHOTTKY 45V 8A TO277A

Vishay General Semiconductor - Diodes Division
2,789 -

RFQ

V8P45HM3_A/H

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 45 V 45 V 8A -40°C ~ 150°C 580 mV @ 8 A
VS-20MQ060NTRPBF

VS-20MQ060NTRPBF

DIODE SCHOTTKY 60V 2A DO214AC

Vishay General Semiconductor - Diodes Division
2,698 -

RFQ

VS-20MQ060NTRPBF

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 31pF @ 10V, 1MHz - 500 µA @ 60 V 60 V 2A -55°C ~ 150°C 780 mV @ 2 A
VS-30EPF04-M3

VS-30EPF04-M3

DIODE GEN PURP 400V 30A TO247AC

Vishay General Semiconductor - Diodes Division
2,496 -

RFQ

VS-30EPF04-M3

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 400 V 400 V 30A -40°C ~ 150°C 1.41 V @ 30 A
SS10P3-M3/87A

SS10P3-M3/87A

DIODE SCHOTTKY 30V 10A TO277A

Vishay General Semiconductor - Diodes Division
2,528 -

RFQ

SS10P3-M3/87A

Ficha técnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 800 µA @ 30 V 30 V 10A -55°C ~ 150°C 560 mV @ 10 A
VS-30EPF06-M3

VS-30EPF06-M3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division
2,160 -

RFQ

VS-30EPF06-M3

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 600 V 600 V 30A -40°C ~ 150°C 1.41 V @ 30 A
UH4PBCHM3_A/I

UH4PBCHM3_A/I

DIODE GEN PURP 100V 2A TO277A

Vishay General Semiconductor - Diodes Division
3,784 -

RFQ

UH4PBCHM3_A/I

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 21pF @ 4V, 1MHz 25 ns 5 µA @ 100 V 100 V 2A -55°C ~ 175°C 1.05 V @ 2 A
VS-30EPF10-M3

VS-30EPF10-M3

DIODE GEN PURP 1KV 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,529 -

RFQ

VS-30EPF10-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 450 ns 100 µA @ 1000 V 1000 V 30A -40°C ~ 150°C 1.41 V @ 30 A
BYWB29-200-E3/81

BYWB29-200-E3/81

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division
770 -

RFQ

BYWB29-200-E3/81

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 10 µA @ 200 V 200 V 8A -65°C ~ 150°C 1.3 V @ 20 A
BYV28-200-TR

BYV28-200-TR

DIODE AVALANCHE 200V 3.5A SOD64

Vishay General Semiconductor - Diodes Division
278 -

RFQ

BYV28-200-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 30 ns 1 µA @ 200 V 200 V 3.5A -55°C ~ 175°C 1.1 V @ 5 A
SB260-E3/73

SB260-E3/73

DIODE SCHOTTKY 60V 2A DO204AC

Vishay General Semiconductor - Diodes Division
1,808 -

RFQ

SB260-E3/73

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 2A -65°C ~ 150°C 680 mV @ 2 A
GPP20M-E3/73

GPP20M-E3/73

DIODE GEN PURP 1KV 2A DO204AC

Vishay General Semiconductor - Diodes Division
1,653 -

RFQ

GPP20M-E3/73

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYW74-L36

BYW74-L36

DIODE AVAL 3A 400V SOD64

Vishay General Semiconductor - Diodes Division
3,596 -

RFQ

BYW74-L36

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active - - 200 ns 5 µA @ 400 V 400 V 3A -55°C ~ 175°C 1.1 V @ 3 A
UH4PCCHM3_A/I

UH4PCCHM3_A/I

DIODE GEN PURP 150V 2A TO277A

Vishay General Semiconductor - Diodes Division
3,017 -

RFQ

UH4PCCHM3_A/I

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 21pF @ 4V, 1MHz 25 ns 5 µA @ 150 V 150 V 2A -55°C ~ 175°C 1.05 V @ 2 A
VS-20ETF12S-M3

VS-20ETF12S-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division
2,296 -

RFQ

VS-20ETF12S-M3

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 400 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.31 V @ 20 A
VS-8EWS08STRR-M3

VS-8EWS08STRR-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division
2,571 -

RFQ

VS-8EWS08STRR-M3

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.1 V @ 8 A
VS-8EWS12STRL-M3

VS-8EWS12STRL-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division
3,065 -

RFQ

VS-8EWS12STRL-M3

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1200 V 1200 V 8A -55°C ~ 150°C 1.1 V @ 8 A
VS-HFA25TB60HN3

VS-HFA25TB60HN3

DIODE GEN PURP 600V 25A TO220AC

Vishay General Semiconductor - Diodes Division
3,677 -

RFQ

VS-HFA25TB60HN3

Ficha técnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 20 µA @ 600 V 600 V 25A -55°C ~ 150°C 1.7 V @ 25 A
US1KHE3_A/H

US1KHE3_A/H

DIODE GEN PURP 800V 1A DO214AC

Vishay General Semiconductor - Diodes Division
1,597 -

RFQ

US1KHE3_A/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
VS-8EWS12STR-M3

VS-8EWS12STR-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division
3,062 -

RFQ

VS-8EWS12STR-M3

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1200 V 1200 V 8A -55°C ~ 150°C 1.1 V @ 8 A
Total 11674 Record«Prev1... 1112131415161718...584Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario