Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR400150CT

MBR400150CT

DIODE SCHOTTKY 150V 200A 2 TOWER

GeneSiC Semiconductor
3,114 -

RFQ

MBR400150CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR400150CTR

MBR400150CTR

DIODE SCHOTTKY 150V 200A 2 TOWER

GeneSiC Semiconductor
2,935 -

RFQ

MBR400150CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR400200CT

MBR400200CT

DIODE SCHOTTKY 200V 200A 2 TOWER

GeneSiC Semiconductor
3,334 -

RFQ

MBR400200CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBR400200CTR

MBR400200CTR

DIODE SCHOTTKY 200V 200A 2 TOWER

GeneSiC Semiconductor
3,865 -

RFQ

MBR400200CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBRT200150

MBRT200150

DIODE SCHOTTKY 150V 100A 3 TOWER

GeneSiC Semiconductor
3,322 -

RFQ

MBRT200150

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBRT200150R

MBRT200150R

DIODE SCHOTTKY 150V 100A 3 TOWER

GeneSiC Semiconductor
3,016 -

RFQ

MBRT200150R

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBRT200200

MBRT200200

DIODE SCHOTTKY 200V 100A 3 TOWER

GeneSiC Semiconductor
3,115 -

RFQ

MBRT200200

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBRT200200R

MBRT200200R

DIODE SCHOTTKY 200V 100A 3 TOWER

GeneSiC Semiconductor
2,525 -

RFQ

MBRT200200R

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C Chassis Mount
ND89N08KHPSA1

ND89N08KHPSA1

DIODE MOD POWERBLOCK PB20-1

Infineon Technologies
2,736 -

RFQ

Bulk,Tray - Last Time Buy - - - - - - - - - -
MUR20010CT

MUR20010CT

DIODE MODULE 100V 100A 2TOWER

GeneSiC Semiconductor
3,279 -

RFQ

MUR20010CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 100 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MUR20010CTR

MUR20010CTR

DIODE MODULE 100V 100A 2TOWER

GeneSiC Semiconductor
2,821 -

RFQ

MUR20010CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 100 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20020

MURT20020

DIODE MODULE 200V 100A 3TOWER

GeneSiC Semiconductor
2,268 -

RFQ

MURT20020

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20020R

MURT20020R

DIODE MODULE 100A 3TOWER

GeneSiC Semiconductor
2,875 -

RFQ

MURT20020R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20040

MURT20040

DIODE MODULE 400V 100A 3TOWER

GeneSiC Semiconductor
3,572 -

RFQ

MURT20040

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 400 V 100A 1.35 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20040R

MURT20040R

DIODE MODULE 400V 100A 3TOWER

GeneSiC Semiconductor
3,236 -

RFQ

MURT20040R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard 400 V 100A 1.35 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20060

MURT20060

DIODE MODULE 600V 100A 3TOWER

GeneSiC Semiconductor
3,465 -

RFQ

MURT20060

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 100A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT20060R

MURT20060R

DIODE MODULE 600V 100A 3TOWER

GeneSiC Semiconductor
3,617 -

RFQ

MURT20060R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard 600 V 100A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
DD390N22SHPSA1

DD390N22SHPSA1

DIODE MOD GP 2200V 390A BGPB50SB

Infineon Technologies
3,571 -

RFQ

DD390N22SHPSA1

Ficha técnica

Bulk,Tray - Active 1 Pair Series Connection Standard 2200 V 390A 1.34 V @ 800 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 2200 V -40°C ~ 125°C Chassis Mount
VS-VSMD400CW60

VS-VSMD400CW60

DIODE GEN PURP 600V 200A TO244

Vishay General Semiconductor - Diodes Division
3,687 -

RFQ

VS-VSMD400CW60

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 200A 1.31 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 200 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRTA500100A

MSRTA500100A

DIODE MODULE 1KV 500A 3TOWER

GeneSiC Semiconductor
3,586 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1000 V 500A (DC) 1.2 V @ 500 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C Chassis Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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