Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR20060CT

MBR20060CT

DIODE MODULE 60V 200A 2TOWER

GeneSiC Semiconductor
2,294 -

RFQ

MBR20060CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20060CTR

MBR20060CTR

DIODE MODULE 60V 200A 2TOWER

GeneSiC Semiconductor
2,847 -

RFQ

MBR20060CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20080CT

MBR20080CT

DIODE MODULE 80V 200A 2TOWER

GeneSiC Semiconductor
3,351 -

RFQ

MBR20080CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20080CTR

MBR20080CTR

DIODE MODULE 80V 200A 2TOWER

GeneSiC Semiconductor
2,214 -

RFQ

MBR20080CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR200150CT

MBR200150CT

DIODE SCHOTTKY 150V 100A 2 TOWER

GeneSiC Semiconductor
3,017 -

RFQ

MBR200150CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR200150CTR

MBR200150CTR

DIODE SCHOTTKY 150V 100A 2 TOWER

GeneSiC Semiconductor
2,444 -

RFQ

MBR200150CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR200200CT

MBR200200CT

DIODE SCHOTTKY 200V 100A 2 TOWER

GeneSiC Semiconductor
3,168 -

RFQ

MBR200200CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBR200200CTR

MBR200200CTR

DIODE SCHOTTKY 200V 100A 2 TOWER

GeneSiC Semiconductor
2,507 -

RFQ

MBR200200CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
VS-VSKDU162/12PBF

VS-VSKDU162/12PBF

DIODE GEN 1.2KV 102.5A INTAPAK

Vishay General Semiconductor - Diodes Division
3,032 -

RFQ

VS-VSKDU162/12PBF

Ficha técnica

Bulk HEXFRED® Active 1 Pair Common Cathode Standard 1200 V 102.5A (DC) 3.2 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 30 mA @ 1200 V -40°C ~ 150°C Chassis Mount
UFT5010A

UFT5010A

DIODE GP 100V 25A TO-3

Microsemi Corporation
3,639 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 100 V 25A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 100 V -65°C ~ 175°C -
UFT3270C

UFT3270C

RECTIFIER UFR,FRR

Microchip Technology
3,099 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 700 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 700 V -65°C ~ 175°C Through Hole
UFT5020C

UFT5020C

UFR,FRR

Microchip Technology
2,577 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 200 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 200 V -65°C ~ 175°C Through Hole
UFT5020A

UFT5020A

UFR,FRR

Microchip Technology
3,590 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 200 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 200 V -65°C ~ 175°C Through Hole
UFT3260A

UFT3260A

UFR,FRR

Microchip Technology
2,217 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 600 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 600 V -65°C ~ 175°C Through Hole
UFT5010C

UFT5010C

UFR,FRR

Microchip Technology
2,317 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 100 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 100 V -65°C ~ 175°C Through Hole
UFT3260C

UFT3260C

UFR,FRR

Microchip Technology
2,932 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 600 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 600 V -65°C ~ 175°C Through Hole
UFT5015A

UFT5015A

UFR,FRR

Microchip Technology
3,709 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 150 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 150 V -65°C ~ 175°C Through Hole
UFT5005C

UFT5005C

UFR,FRR

Microchip Technology
3,749 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 100 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 50 V -65°C ~ 175°C Through Hole
UFT3280C

UFT3280C

UFR,FRR

Microchip Technology
3,618 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 800 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 800 V -65°C ~ 175°C Through Hole
UFT5015C

UFT5015C

UFR,FRR

Microchip Technology
2,844 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 150 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 150 V -65°C ~ 175°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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