Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
UFT3280D

UFT3280D

UFR,FRR

Microchip Technology
3,364 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 800 V -65°C ~ 175°C Through Hole
UFT3260D

UFT3260D

UFR,FRR

Microchip Technology
2,290 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 600 V -65°C ~ 175°C Through Hole
UFT5005A

UFT5005A

UFR,FRR

Microchip Technology
3,356 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 100 V 50A 1 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 50 V -65°C ~ 175°C Through Hole
UFT3280A

UFT3280A

UFR,FRR

Microchip Technology
3,912 -

RFQ

Bulk - Active 1 Pair Common Anode Standard 800 V 30A 1.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 800 V -65°C ~ 175°C Through Hole
MSRTA200100AD

MSRTA200100AD

DIODE GEN 1KV 200A 3 TOWER

GeneSiC Semiconductor
3,493 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1000 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C Chassis Mount
MSRTA200120AD

MSRTA200120AD

DIODE GEN 1.2KV 200A 3 TOWER

GeneSiC Semiconductor
3,727 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1200 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C Chassis Mount
MSRTA200140AD

MSRTA200140AD

DIODE GEN 1.4KV 200A 3 TOWER

GeneSiC Semiconductor
2,156 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRTA20060AD

MSRTA20060AD

DIODE GEN PURP 600V 200A 3 TOWER

GeneSiC Semiconductor
3,600 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRTA20080AD

MSRTA20080AD

DIODE GEN PURP 800V 200A 3 TOWER

GeneSiC Semiconductor
3,532 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C Chassis Mount
VS-VSKDU300/06PBF

VS-VSKDU300/06PBF

DIODE GEN PURP 600V 230A INTAPAK

Vishay General Semiconductor - Diodes Division
2,860 -

RFQ

VS-VSKDU300/06PBF

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 230A 1.96 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 50 mA @ 600 V -40°C ~ 150°C Chassis Mount
MURT10040

MURT10040

DIODE ARRAY GP 400V 50A 3TOWER

GeneSiC Semiconductor
3,704 -

RFQ

MURT10040

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT10040R

MURT10040R

DIODE ARRAY GP REV POLAR3TOWER

GeneSiC Semiconductor
3,942 -

RFQ

MURT10040R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard, Reverse Polarity 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT10060

MURT10060

DIODE ARRAY GP 600V 50A 3TOWER

GeneSiC Semiconductor
2,596 -

RFQ

MURT10060

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT10060R

MURT10060R

DIODE ARRAY GP REV POLAR 3TOWER

GeneSiC Semiconductor
3,153 -

RFQ

MURT10060R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard, Reverse Polarity 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
M5060THC1600

M5060THC1600

DIODE MODULE 1.6KV 60A

Sensata-Crydom
3,978 -

RFQ

M5060THC1600

Ficha técnica

Bulk - Active 3 Common Cathode Standard 1600 V 60A 1.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C Chassis Mount
MBR30035CT

MBR30035CT

DIODE MODULE 35V 200A 2TOWER

GeneSiC Semiconductor
2,432 -

RFQ

MBR30035CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 35 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR300100CT

MBR300100CT

DIODE MODULE 100V 150A 2TOWER

GeneSiC Semiconductor
2,223 -

RFQ

MBR300100CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR300100CTR

MBR300100CTR

DIODE MODULE 100V 150A 2TOWER

GeneSiC Semiconductor
3,821 -

RFQ

MBR300100CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR30020CT

MBR30020CT

DIODE MODULE 20V 150A 2TOWER

GeneSiC Semiconductor
2,438 -

RFQ

MBR30020CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR30020CTR

MBR30020CTR

DIODE MODULE 20V 150A 2TOWER

GeneSiC Semiconductor
2,723 -

RFQ

MBR30020CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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