Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GSIB15A60-E3/45

GSIB15A60-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,076 -

RFQ

GSIB15A60-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2080-E3/45

GSIB2080-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,016 -

RFQ

GSIB2080-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2520-E3/45

GSIB2520-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,851 -

RFQ

GSIB2520-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2006-E3/45

BU2006-E3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,206 -

RFQ

BU2006-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2008-E3/51

BU2008-E3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,477 -

RFQ

BU2008-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBU8M-E4/51

KBU8M-E4/51

BRIDGE RECT 1PHASE 1KV 8A KBU

Vishay General Semiconductor - Diodes Division
2,769 -

RFQ

KBU8M-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 10 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6B-E4/51

KBU6B-E4/51

BRIDGE RECT 1PHASE 100V 6A KBU

Vishay General Semiconductor - Diodes Division
3,411 -

RFQ

KBU6B-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6M-E4/51

KBU6M-E4/51

BRIDGE RECT 1PHASE 1KV 6A KBU

Vishay General Semiconductor - Diodes Division
2,751 -

RFQ

KBU6M-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC2502W-E4/51

GBPC2502W-E4/51

BRIDGE RECT 1P 200V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
3,522 -

RFQ

GBPC2502W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1201W-E4/51

GBPC1201W-E4/51

BRIDGE RECT 1P 100V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,358 -

RFQ

GBPC1201W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 100 V 12 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1202W-E4/51

GBPC1202W-E4/51

BRIDGE RECT 1P 200V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
2,222 -

RFQ

GBPC1202W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 12 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1206W-E4/51

GBPC1206W-E4/51

BRIDGE RECT 1P 600V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,037 -

RFQ

GBPC1206W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 12 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1502W-E4/51

GBPC1502W-E4/51

BRIDGE RECT 1P 200V 15A GBPC-W

Vishay General Semiconductor - Diodes Division
2,519 -

RFQ

GBPC1502W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 15 A 1.1 V @ 7.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1510-E4/51

GBPC1510-E4/51

BRIDGE RECT 1PHASE 1KV 15A GBPC

Vishay General Semiconductor - Diodes Division
3,484 -

RFQ

GBPC1510-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC1510W-E4/51

GBPC1510W-E4/51

BRIDGE RECT 1P 1KV 15A GBPC-W

Vishay General Semiconductor - Diodes Division
3,861 -

RFQ

GBPC1510W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2508-E4/51

GBPC2508-E4/51

BRIDGE RECT 1PHASE 800V 25A GBPC

Vishay General Semiconductor - Diodes Division
2,855 -

RFQ

GBPC2508-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
BU2506-E3/45

BU2506-E3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
780 -

RFQ

BU2506-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-GBPC3504W

VS-GBPC3504W

BRIDGE RECT 1P 400V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,693 -

RFQ

VS-GBPC3504W

Ficha técnica

Bulk VS-GBPC Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 2 mA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC2510W

VS-GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division
2,898 -

RFQ

VS-GBPC2510W

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 2 mA @ 1 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3506W

VS-GBPC3506W

BRIDGE RECT 1P 600V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,410 -

RFQ

VS-GBPC3506W

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 600 V 35 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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