Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
VS-GBPC2506W

VS-GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
2,218 -

RFQ

VS-GBPC2506W

Ficha técnica

Bulk VS-GBPC Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 2 mA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC2510A

VS-GBPC2510A

BRIDGE RECT 1P 1KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division
3,197 -

RFQ

VS-GBPC2510A

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 1 kV 25 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
VS-GBPC2512A

VS-GBPC2512A

BRIDGE RECT 1P 1.2KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division
3,332 -

RFQ

VS-GBPC2512A

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 1.2 kV 25 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
VS-GBPC2512W

VS-GBPC2512W

BRIDGE RECT 1P 1.2KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division
3,067 -

RFQ

VS-GBPC2512W

Ficha técnica

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 2 mA @ 1200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-26MB05A

VS-26MB05A

BRIDGE RECT 1PHASE 50V 25A D-34

Vishay General Semiconductor - Diodes Division
3,341 -

RFQ

VS-26MB05A

Ficha técnica

Bulk - Active Single Phase Standard 50 V 25 A - 10 µA @ 50 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC1506W-E4/51

GBPC1506W-E4/51

BRIDGE RECT 1P 600V 15A GBPC-W

Vishay General Semiconductor - Diodes Division
180 -

RFQ

GBPC1506W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 15 A 1.1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3510W

VS-GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division
3,505 -

RFQ

VS-GBPC3510W

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 1 kV 35 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3512W

VS-GBPC3512W

BRIDGE RECT 1P 1.2KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division
3,500 -

RFQ

VS-GBPC3512W

Ficha técnica

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 35 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-36MB05A

VS-36MB05A

BRIDGE RECT 1PHASE 50V 35A D-34

Vishay General Semiconductor - Diodes Division
2,984 -

RFQ

VS-36MB05A

Ficha técnica

Bulk - Active Single Phase Standard 50 V 35 A - 10 µA @ 1600 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB10A

VS-36MB10A

BRIDGE RECT 1PHASE 100V 35A D-34

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

VS-36MB10A

Ficha técnica

Bulk - Active Single Phase Standard 100 V 35 A - 10 µA @ 100 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC3502W-E4/51

GBPC3502W-E4/51

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,422 -

RFQ

GBPC3502W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-36MB20A

VS-36MB20A

BRIDGE RECT 1PHASE 200V 35A D-34

Vishay General Semiconductor - Diodes Division
3,156 -

RFQ

VS-36MB20A

Ficha técnica

Bulk - Active Single Phase Standard 200 V 35 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB40A

VS-36MB40A

BRIDGE RECT 1PHASE 400V 35A D-34

Vishay General Semiconductor - Diodes Division
2,513 -

RFQ

VS-36MB40A

Ficha técnica

Bulk - Active Single Phase Standard 400 V 35 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB60A

VS-36MB60A

BRIDGE RECT 1PHASE 600V 35A D-34

Vishay General Semiconductor - Diodes Division
3,401 -

RFQ

VS-36MB60A

Ficha técnica

Bulk - Active Single Phase Standard 600 V 35 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB80A

VS-36MB80A

BRIDGE RECT 1PHASE 800V 35A D-34

Vishay General Semiconductor - Diodes Division
2,672 -

RFQ

VS-36MB80A

Ficha técnica

Bulk - Active Single Phase Standard 800 V 35 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC3502-E4/51

GBPC3502-E4/51

BRIDGE RECT 1PHASE 200V 35A GBPC

Vishay General Semiconductor - Diodes Division
156 -

RFQ

GBPC3502-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3504-E4/51

GBPC3504-E4/51

BRIDGE RECT 1PHASE 400V 35A GBPC

Vishay General Semiconductor - Diodes Division
200 -

RFQ

GBPC3504-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
VS-26MB40A

VS-26MB40A

BRIDGE RECT 1PHASE 400V 25A D-34

Vishay General Semiconductor - Diodes Division
3,100 -

RFQ

VS-26MB40A

Ficha técnica

Bulk - Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-26MB80A

VS-26MB80A

BRIDGE RECT 1PHASE 800V 25A D-34

Vishay General Semiconductor - Diodes Division
3,961 -

RFQ

VS-26MB80A

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB100A

VS-36MB100A

BRIDGE RECT 1PHASE 1KV 35A D-34

Vishay General Semiconductor - Diodes Division
2,502 -

RFQ

VS-36MB100A

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 35 A - 10 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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