Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DF04S-E3/77

DF04S-E3/77

BRIDGE RECT 1PHASE 400V 1A DFS

Vishay General Semiconductor - Diodes Division
2,515 -

RFQ

DF04S-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DF08S-E3/77

DF08S-E3/77

BRIDGE RECT 1PHASE 800V 1A DFS

Vishay General Semiconductor - Diodes Division
3,693 -

RFQ

DF08S-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
B40C800G-E4/51

B40C800G-E4/51

BRIDGE RECT 1PHASE 65V 900MA WOG

Vishay General Semiconductor - Diodes Division
2,917 -

RFQ

B40C800G-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 65 V 900 mA 1 V @ 900 mA 10 µA @ 65 V -40°C ~ 125°C (TJ) Through Hole 4-Circular, WOG
B80C800DM-E3/45

B80C800DM-E3/45

BRIDGE RECT 1P 125V 900MA DFM

Vishay General Semiconductor - Diodes Division
3,508 -

RFQ

B80C800DM-E3/45

Ficha técnica

Tube - Active Single Phase Standard 125 V 900 mA 1 V @ 900 mA 10 µA @ 125 V -40°C ~ 125°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
DF06SA-E3/45

DF06SA-E3/45

BRIDGE RECT 1PHASE 600V 1A DFS

Vishay General Semiconductor - Diodes Division
2,789 -

RFQ

DF06SA-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
MB4M-E3/45

MB4M-E3/45

BRIDGE RECT 1P 400V 500MA MBM

Vishay General Semiconductor - Diodes Division
3,419 -

RFQ

MB4M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 500 mA 1 V @ 400 mA 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.200, 5.08mm)
DF08M-E3/45

DF08M-E3/45

BRIDGE RECT 1PHASE 800V 1A DFM

Vishay General Semiconductor - Diodes Division
2,497 -

RFQ

DF08M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
DF1510S-E3/45

DF1510S-E3/45

BRIDGE RECT 1PHASE 1KV 1.5A DFS

Vishay General Semiconductor - Diodes Division
2,731 -

RFQ

DF1510S-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DFL1506S-E3/45

DFL1506S-E3/45

BRIDGE RECT 1PHASE 600V 1.5A DFS

Vishay General Semiconductor - Diodes Division
3,397 -

RFQ

DFL1506S-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DF005S-E3/45

DF005S-E3/45

BRIDGE RECT 1PHASE 50V 1A DFS

Vishay General Semiconductor - Diodes Division
2,792 -

RFQ

DF005S-E3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 1 A 1.1 V @ 1 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
GBU4B-E3/51

GBU4B-E3/51

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division
3,056 -

RFQ

GBU4B-E3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D-E3/51

GBU8D-E3/51

BRIDGE RECT 1PHASE 200V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,862 -

RFQ

GBU8D-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3.9 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G-E3/51

GBU8G-E3/51

BRIDGE RECT 1PHASE 400V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,142 -

RFQ

GBU8G-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3.9 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M-E3/45

GBU6M-E3/45

BRIDGE RECT 1PHASE 1KV 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,197 -

RFQ

GBU6M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.8 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-M3/45

GBU8M-M3/45

BRIDGE RECT 1PHASE 1KV 8A GBU

Vishay General Semiconductor - Diodes Division
2,612 -

RFQ

GBU8M-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1008A-M3/45

BU1008A-M3/45

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
3,468 -

RFQ

BU1008A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-1KAB40E

VS-1KAB40E

BRIDGE RECT 1P 400V 1.2A D-38

Vishay General Semiconductor - Diodes Division
3,502 -

RFQ

VS-1KAB40E

Ficha técnica

Bulk - Active Single Phase Standard 400 V 1.2 A 1.1 V @ 1.2 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
BU1506-E3/45

BU1506-E3/45

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,034 -

RFQ

BU1506-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1506-E3/51

BU1506-E3/51

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,845 -

RFQ

BU1506-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1508-E3/51

BU1508-E3/51

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
2,122 -

RFQ

BU1508-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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