Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFI614BTUFP001

IRFI614BTUFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,000 -

RFQ

IRFI614BTUFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tc) 10V 2Ohm @ 1.4A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 3.13W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSS1N60B

SSS1N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,684 -

RFQ

SSS1N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tj) 10V 12Ohm @ 500mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 17W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI3447DV

SI3447DV

P-CHANNEL MOSFET

Fairchild Semiconductor
9,000 -

RFQ

SI3447DV

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 33mOhm @ 5.5A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 1926 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSP1N60B

SSP1N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,644 -

RFQ

SSP1N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 12Ohm @ 500mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI610ATU

IRLI610ATU

MOSFET N-CH 200V 3.3A I2PAK

Fairchild Semiconductor
3,000 -

RFQ

IRLI610ATU

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 5V 1.5Ohm @ 1.65A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 3.1W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDTL01N60ZT1G

NDTL01N60ZT1G

MOSFET N-CH 600V 250MA SOT223

Fairchild Semiconductor
6,000 -

RFQ

NDTL01N60ZT1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 250mA (Tc) - 15Ohm @ 400mA, 10V 4.5V @ 50µA 4.9 nC @ 10 V ±30V 92 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFI9Z14TU

SFI9Z14TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,000 -

RFQ

SFI9Z14TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 3.4A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS720B

IRFS720B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,317 -

RFQ

IRFS720B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tj) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU1N50TU

FQU1N50TU

MOSFET N-CH 500V 1.1A IPAK

Fairchild Semiconductor
2,056 -

RFQ

FQU1N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.1A (Tc) 10V 9Ohm @ 550mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR220BTM

IRFR220BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,760 -

RFQ

IRFR220BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) 10V 800mOhm @ 2.3A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS820B

IRFS820B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,853 -

RFQ

IRFS820B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tj) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSS2N60B

SSS2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,094 -

RFQ

SSS2N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tj) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSR1N60BTM-WS

SSR1N60BTM-WS

MOSFET N-CH 600V 900MA DPAK

Fairchild Semiconductor
2,350 -

RFQ

SSR1N60BTM-WS

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 900mA (Tc) 10V 12Ohm @ 450mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD3055

RFD3055

MOSFET N-CH 60V 12A IPAK

Fairchild Semiconductor
2,302 -

RFQ

RFD3055

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 300 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76609D3ST_NL

HUFA76609D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,281 -

RFQ

HUFA76609D3ST_NL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFI9Z24TU

SFI9Z24TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,000 -

RFQ

SFI9Z24TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL610A

IRL610A

MOSFET N-CH 200V 3.3A TO220-3

Fairchild Semiconductor
1,744 -

RFQ

IRL610A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 5V 1.5Ohm @ 1.65A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFR9014TF

SFR9014TF

MOSFET P-CH 60V 5.3A DPAK

Fairchild Semiconductor
5,740 -

RFQ

SFR9014TF

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQNL1N50BBU

FQNL1N50BBU

MOSFET N-CH 500V 270MA TO92-3

Fairchild Semiconductor
2,115 -

RFQ

FQNL1N50BBU

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 270mA (Tc) 10V 9Ohm @ 135mA, 10V 3.7V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFW630BTM

IRFW630BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,600 -

RFQ

IRFW630BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 720 pF @ 25 V - 3.13W (Ta), 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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