| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IRFI614BTUFP001N-CHANNEL POWER MOSFETFairchild Semiconductor | 3,000 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.8A (Tc) | 10V | 2Ohm @ 1.4A, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 275 pF @ 25 V | - | 3.13W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SSS1N60BN-CHANNEL POWER MOSFETFairchild Semiconductor | 3,684 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tj) | 10V | 12Ohm @ 500mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SI3447DVP-CHANNEL MOSFETFairchild Semiconductor | 9,000 | - | RFQ |   Ficha técnica | Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 1926 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | SSP1N60BN-CHANNEL POWER MOSFETFairchild Semiconductor | 3,644 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 12Ohm @ 500mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRLI610ATUMOSFET N-CH 200V 3.3A I2PAKFairchild Semiconductor | 3,000 | - | RFQ |   Ficha técnica | Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 5V | 1.5Ohm @ 1.65A, 5V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 240 pF @ 25 V | - | 3.1W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | NDTL01N60ZT1GMOSFET N-CH 600V 250MA SOT223Fairchild Semiconductor | 6,000 | - | RFQ |   Ficha técnica | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 250mA (Tc) | - | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9 nC @ 10 V | ±30V | 92 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | SFI9Z14TUP-CHANNEL POWER MOSFETFairchild Semiconductor | 3,000 | - | RFQ |   Ficha técnica | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 3.4A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 3.8W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IRFS720BN-CHANNEL POWER MOSFETFairchild Semiconductor | 2,317 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tj) | 10V | 1.75Ohm @ 1.65A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | FQU1N50TUMOSFET N-CH 500V 1.1A IPAKFairchild Semiconductor | 2,056 | - | RFQ |   Ficha técnica | Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.1A (Tc) | 10V | 9Ohm @ 550mA, 10V | 5V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRFR220BTMN-CHANNEL POWER MOSFETFairchild Semiconductor | 1,760 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±30V | 390 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | IRFS820BN-CHANNEL POWER MOSFETFairchild Semiconductor | 4,853 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tj) | 10V | 2.6Ohm @ 1.25A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 610 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SSS2N60BN-CHANNEL POWER MOSFETFairchild Semiconductor | 3,094 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tj) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SSR1N60BTM-WSMOSFET N-CH 600V 900MA DPAKFairchild Semiconductor | 2,350 | - | RFQ |   Ficha técnica | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | RFD3055MOSFET N-CH 60V 12A IPAKFairchild Semiconductor | 2,302 | - | RFQ |   Ficha técnica | Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 23 nC @ 20 V | ±20V | 300 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | HUFA76609D3ST_NLN-CHANNEL POWER MOSFETFairchild Semiconductor | 2,281 | - | RFQ |   Ficha técnica | Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 160mOhm @ 10A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±16V | 425 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | SFI9Z24TUP-CHANNEL POWER MOSFETFairchild Semiconductor | 2,000 | - | RFQ |   Ficha técnica | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 10V | 280mOhm @ 4.9A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 3.8W (Ta), 49W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IRL610AMOSFET N-CH 200V 3.3A TO220-3Fairchild Semiconductor | 1,744 | - | RFQ |   Ficha técnica | Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 5V | 1.5Ohm @ 1.65A, 5V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 240 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SFR9014TFMOSFET P-CH 60V 5.3A DPAKFairchild Semiconductor | 5,740 | - | RFQ |   Ficha técnica | Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.3A (Tc) | 10V | 500mOhm @ 2.7A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 2.5W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FQNL1N50BBUMOSFET N-CH 500V 270MA TO92-3Fairchild Semiconductor | 2,115 | - | RFQ |   Ficha técnica | Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 270mA (Tc) | 10V | 9Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRFW630BTMN-CHANNEL POWER MOSFETFairchild Semiconductor | 1,600 | - | RFQ |   Ficha técnica | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 720 pF @ 25 V | - | 3.13W (Ta), 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |