Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS254BFP001

IRFS254BFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,200 -

RFQ

IRFS254BFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 16A (Tc) 10V 140mOhm @ 8A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFM210BTF

IRFM210BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,025 -

RFQ

IRFM210BTF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 770mA (Tc) 10V 1.5Ohm @ 390mA, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP5N20L

FQP5N20L

MOSFET N-CH 200V 4.5A TO220-3

Fairchild Semiconductor
5,950 -

RFQ

FQP5N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) 5V, 10V 1.2Ohm @ 2.25A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP3N25

FQP3N25

MOSFET N-CH 250V 2.8A TO220-3

Fairchild Semiconductor
5,900 -

RFQ

FQP3N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF7N10L

FQPF7N10L

MOSFET N-CH 100V 5.5A TO220F

Fairchild Semiconductor
5,887 -

RFQ

FQPF7N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Tc) 5V, 10V 350mOhm @ 2.75A, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76013P3

HUF76013P3

MOSFET N-CH 20V 20A TO220-3

Fairchild Semiconductor
5,326 -

RFQ

HUF76013P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP9N08L

FQP9N08L

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor
5,169 -

RFQ

FQP9N08L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 5V, 10V 210mOhm @ 4.65A, 10V 5V @ 250µA 6.1 nC @ 5 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU330BTU

IRFU330BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,090 -

RFQ

IRFU330BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP9N08

FQP9N08

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor
3,153 -

RFQ

FQP9N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V 4V @ 250µA 7.7 nC @ 10 V ±25V 250 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP4N25

FQP4N25

MOSFET N-CH 250V 3.6A TO220-3

Fairchild Semiconductor
2,950 -

RFQ

FQP4N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6676AS

FDU6676AS

MOSFET N-CH 30V 90A IPAK

Fairchild Semiconductor
1,708 -

RFQ

FDU6676AS

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Ta) 4.5V, 10V 5.8mOhm @ 16A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 2470 pF @ 15 V - 70W (Ta) -55°C ~ 150°C (TJ) Through Hole
HUF75309D3S

HUF75309D3S

MOSFET N-CH 55V 19A DPAK

Fairchild Semiconductor
1,687 -

RFQ

HUF75309D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) - 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFW720BTM

IRFW720BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,672 -

RFQ

IRFW720BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW530ATM

IRFW530ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,166 -

RFQ

IRFW530ATM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 110mOhm @ 7A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 3.8W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFW9520TM

SFW9520TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,994 -

RFQ

SFW9520TM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 550 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76619D3S

HUF76619D3S

MOSFET N-CH 100V 18A TO252AA

Fairchild Semiconductor
5,406 -

RFQ

HUF76619D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 4.5V, 10V 85mOhm @ 18A, 10V 3V @ 250µA 29 nC @ 10 V ±16V 767 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFU9210TU

SFU9210TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,740 -

RFQ

SFU9210TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 1.6A (Tc) 10V 3Ohm @ 800mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF2N30

FQPF2N30

MOSFET N-CH 300V 1.34A TO220F

Fairchild Semiconductor
4,057 -

RFQ

FQPF2N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 1.34A (Tc) 10V 3.7Ohm @ 670mA, 10V 5V @ 250µA 5 nC @ 10 V ±30V 130 pF @ 25 V - 16W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3P20

FQPF3P20

MOSFET P-CH 200V 2.2A TO220F

Fairchild Semiconductor
4,000 -

RFQ

FQPF3P20

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.2A (Tc) 10V 2.7Ohm @ 1.1A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI7N10LTU

FQI7N10LTU

MOSFET N-CH 100V 7.3A I2PAK

Fairchild Semiconductor
4,000 -

RFQ

FQI7N10LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Tc) 5V, 10V 350mOhm @ 3.65A, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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