Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP80R360P7XKSA1

IPP80R360P7XKSA1

MOSFET N-CH 800V 13A TO220-3

Infineon Technologies
2,241 -

RFQ

IPP80R360P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 84W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZA60R120P7XKSA1

IPZA60R120P7XKSA1

MOSFET N-CH 600V 26A TO247-4

Infineon Technologies
2,555 -

RFQ

IPZA60R120P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW35N60C3FKSA1

SPW35N60C3FKSA1

MOSFET N-CH 650V 34.6A TO247-3

Infineon Technologies
3,156 -

RFQ

SPW35N60C3FKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R107M1HXKSA1

IMZA65R107M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
307 -

RFQ

Tube - Active - - - 20A (Tc) - - - - - - - - - -
IMZA65R072M1HXKSA1

IMZA65R072M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
288 -

RFQ

Tube - Active - - - 28A (Tc) - - - - - - - - - -
BF2040RE6814

BF2040RE6814

RF N-CHANNEL MOSFET

Infineon Technologies
9,777 -

RFQ

BF2040RE6814

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS119N H7796

BSS119N H7796

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
10,000 -

RFQ

BSS119N H7796

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BF2040E6814HTSA

BF2040E6814HTSA

RF N-CHANNEL MOSFET

Infineon Technologies
6,000 -

RFQ

BF2040E6814HTSA

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BF20-40E6814

BF20-40E6814

RF N-CHANNEL MOSFET

Infineon Technologies
4,000 -

RFQ

BF20-40E6814

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BF5020WE6327

BF5020WE6327

N-CHANNEL POWER MOSFET

Infineon Technologies
2,615 -

RFQ

BF5020WE6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPU50R950CEBTMA1

IPU50R950CEBTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
4,380 -

RFQ

IPU50R950CEBTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPS135N03LG

IPS135N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,861 -

RFQ

IPS135N03LG

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
BSO083N03N03MSG

BSO083N03N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSP320SL6433

BSP320SL6433

SMALL-SIGNAL N-CHANNEL MOSFET

Infineon Technologies
7,937 -

RFQ

BSP320SL6433

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SP000089223

SP000089223

P-CHANNEL POWER MOSFET

Infineon Technologies
3,000 -

RFQ

SP000089223

Ficha técnica

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 260mA (Ta) 2.8V, 10V 12Ohm @ 260mA, 10V 2V @ 130µA 5.4 nC @ 10 V ±20V 104 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS159NL6906

BSS159NL6906

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
3,000 -

RFQ

BSS159NL6906

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP320SL6327

BSP320SL6327

SMALL-SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,900 -

RFQ

BSP320SL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPS050N03LG

IPS050N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,500 -

RFQ

IPS050N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC090N03MSGXT

BSC090N03MSGXT

N-CHANNEL POWER MOSFET

Infineon Technologies
4,770 -

RFQ

BSC090N03MSGXT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSO083N03MSG

BSO083N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,690 -

RFQ

BSO083N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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