Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R8002ANJGTL

R8002ANJGTL

NCH 800V 2A POWER MOSFET : R8002

Rohm Semiconductor
1,000 -

RFQ

R8002ANJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) Surface Mount
R8002KNXC7G

R8002KNXC7G

800V 1.6A, TO-220FM, HIGH-SPEED

Rohm Semiconductor
965 -

RFQ

R8002KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 28W (Tc) 150°C (TJ) Through Hole
RCJ331N25TL

RCJ331N25TL

250V 33A, NCH, TO-263S, POWER MO

Rohm Semiconductor
1,000 -

RFQ

RCJ331N25TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
RCJ451N20TL

RCJ451N20TL

200V 45A, NCH, TO-263S, POWER MO

Rohm Semiconductor
1,000 -

RFQ

RCJ451N20TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
RX3G07CGNC16

RX3G07CGNC16

MOSFET N-CH 40V 70A TO220AB

Rohm Semiconductor
877 -

RFQ

RX3G07CGNC16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) - 4.7mOhm @ 70A, 10V 2.5V @ 500µA 32 nC @ 10 V ±20V 2410 pF @ 20 V - 78W (Tc) 150°C (TJ) Through Hole
R8003KNXC7G

R8003KNXC7G

800V 3A, TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
977 -

RFQ

R8003KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 2mA 11.5 nC @ 10 V ±20V 300 pF @ 100 V - 36W (Tc) 150°C (TJ) Through Hole
R6504ENXC7G

R6504ENXC7G

650V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6504ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 4V @ 130µA 15 nC @ 10 V ±20V 220 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6004ENXC7G

R6004ENXC7G

600V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6004ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6504KNXC7G

R6504KNXC7G

650V 4A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
996 -

RFQ

R6504KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 5V @ 130µA 10 nC @ 10 V ±20V 270 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6006KNXC7G

R6006KNXC7G

600V 6A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
997 -

RFQ

R6006KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6009ENXC7G

R6009ENXC7G

600V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6009ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6509ENXC7G

R6509ENXC7G

650V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6509ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6009KNXC7G

R6009KNXC7G

600V 9A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
1,000 -

RFQ

R6009KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6507ENXC7G

R6507ENXC7G

650V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6507ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 665mOhm @ 2.4A, 10V 4V @ 200µA 20 nC @ 10 V ±20V 390 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
R6007KNXC7G

R6007KNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
1,000 -

RFQ

R6007KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 620mOhm @ 2.4A, 10V 5V @ 1mA 14.5 nC @ 10 V ±20V 470 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
R8008ANJGTL

R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Rohm Semiconductor
1,000 -

RFQ

R8008ANJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Surface Mount
R6011ENXC7G

R6011ENXC7G

600V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6011ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
R6011KNXC7G

R6011KNXC7G

600V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
1,000 -

RFQ

R6011KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
R6014YNXC7G

R6014YNXC7G

600V 9A TO-220FM, FAST SWITCHING

Rohm Semiconductor
3,889 -

RFQ

R6014YNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V, 12V 260mOhm @ 5A, 12V 6V @ 1.4mA 20 nC @ 10 V ±30V 890 pF @ 100 V - 54W (Tc) 150°C (TJ) Through Hole
R6515KNX3C16

R6515KNX3C16

650V 15A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor
970 -

RFQ

R6515KNX3C16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 161W (Tc) 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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