Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UJ4C075060B7S

UJ4C075060B7S

750V/60MOHM, N-OFF SIC CASCODE

UnitedSiC
3,715 -

RFQ

UJ4C075060B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 25.8A (Tc) 12V 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1420 pF @ 400 V - 128W (Tc) -55°C ~ 175°C (TJ)
UJ4C075033B7S

UJ4C075033B7S

750V/33MOHM, N-OFF SIC CASCODE

UnitedSiC
2,063 -

RFQ

UJ4C075033B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 44A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ)
UJ4SC075009B7S

UJ4SC075009B7S

750V/9MOHM, N-OFF SIC STACK CASC

UnitedSiC
2,214 -

RFQ

UJ4SC075009B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3SC065030B7S

UF3SC065030B7S

650V/30MOHM, SIC, STACKED FAST C

UnitedSiC
2,569 -

RFQ

UF3SC065030B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 62A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 214W (Tc) 175°C (TJ) Surface Mount
UF3C065040K4S

UF3C065040K4S

MOSFET N-CH 650V 54A TO247-4

UnitedSiC
2,650 -

RFQ

UF3C065040K4S

Ficha técnica

Tube - Active N-Channel - 650 V 54A (Tc) 12V 52mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065030K3S

UJ3C065030K3S

MOSFET N-CH 650V 85A TO247-3

UnitedSiC
2,815 -

RFQ

UJ3C065030K3S

Ficha técnica

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4SC075006K4S

UJ4SC075006K4S

750V/6MOHM, SIC, STACKED CASCODE

UnitedSiC
3,567 -

RFQ

UJ4SC075006K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 120A (Tc) 12V 7.4mOhm @ 80A, 12V 6V @ 10mA 164 nC @ 15 V ±20V 8374 pF @ 400 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075023K4S

UJ4C075023K4S

750V/23MOHM, SIC, CASCODE, G4, T

UnitedSiC
2,369 -

RFQ

UJ4C075023K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 66A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4SC075011K4S

UJ4SC075011K4S

750V/11MOHM, SIC, STACKED CASCOD

UnitedSiC
2,315 -

RFQ

UJ4SC075011K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 104A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 357W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065080B3

UJ3C065080B3

MOSFET N-CH 650V 25A TO263

UnitedSiC
5,390 -

RFQ

UJ3C065080B3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 25A (Tc) 12V 111mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C170400K3S

UF3C170400K3S

SICFET N-CH 1700V 7.6A TO247-3

UnitedSiC
20,849 -

RFQ

UF3C170400K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1700 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27.5 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075060K4S

UJ4C075060K4S

SICFET N-CH 750V 28A TO247-4

UnitedSiC
2,828 -

RFQ

UJ4C075060K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030B3

UF3C065030B3

MOSFET N-CH 650V 65A TO263

UnitedSiC
3,676 -

RFQ

UF3C065030B3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 65A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C120080K3S

UF3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC
19,055 -

RFQ

UF3C120080K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120080K3S

UJ3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC
9,065 -

RFQ

UJ3C120080K3S

Ficha técnica

Tube - Not For New Designs N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120080K4S

UF3C120080K4S

SICFET N-CH 1200V 33A TO247-4

UnitedSiC
2,852 -

RFQ

UF3C120080K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K3S

UJ4C075018K3S

SICFET N-CH 750V 81A TO247-3

UnitedSiC
7,535 -

RFQ

UJ4C075018K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030T3S

UF3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC
5,201 -

RFQ

UF3C065030T3S

Ficha técnica

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065030T3S

UJ3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC
1,831 -

RFQ

UJ3C065030T3S

Ficha técnica

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K4S

UJ4C075018K4S

SICFET N-CH 750V 81A TO247-4

UnitedSiC
1,756 -

RFQ

UJ4C075018K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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