Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UF3C065030K4S

UF3C065030K4S

MOSFET N-CH 650V 85A TO247-4

UnitedSiC
1,988 -

RFQ

UF3C065030K4S

Ficha técnica

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120040K3S

UJ3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC
1,972 -

RFQ

UJ3C120040K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K3S

UF3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC
1,063 -

RFQ

UF3C120040K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K4S

UF3C120040K4S

SICFET N-CH 1200V 65A TO247-4

UnitedSiC
918 -

RFQ

UF3C120040K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4SC075009K4S

UJ4SC075009K4S

750V/9MOHM, SIC, STACKED CASCODE

UnitedSiC
193 -

RFQ

UJ4SC075009K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120016K3S

UF3SC120016K3S

SICFET N-CH 1200V 107A TO247-3

UnitedSiC
890 -

RFQ

UF3SC120016K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 107A (Tc) 12V 21mOhm @ 50A, 12V 6V @ 10mA 218 nC @ 15 V ±20V 7824 pF @ 800 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120016K4S

UF3SC120016K4S

SICFET N-CH 1200V 107A TO247-4

UnitedSiC
2,390 -

RFQ

UF3SC120016K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 107A (Tc) 12V 21mOhm @ 50A, 12V 6V @ 10mA 218 nC @ 15 V ±20V 7824 pF @ 800 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC065007K4S

UF3SC065007K4S

MOSFET N-CH 650V 120A TO247-4

UnitedSiC
948 -

RFQ

UF3SC065007K4S

Ficha técnica

Tube - Active N-Channel - 650 V 120A (Tc) 12V 9mOhm @ 50A, 12V 6V @ 10mA 214 nC @ 15 V ±20V - - 789W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120009K4S

UF3SC120009K4S

SICFET N-CH 1200V 120A TO247-4

UnitedSiC
2,331 -

RFQ

UF3SC120009K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 120A (Tc) 12V 11mOhm @ 100A, 12V 6V @ 10mA 234 nC @ 15 V ±20V 8512 pF @ 100 V - 789W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120150B7S

UF3C120150B7S

1200V/150MOHM, SIC, FAST CASCODE

UnitedSiC
952 -

RFQ

UF3C120150B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 17A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 25.7 nC @ 12 V ±25V 738 pF @ 100 V Super Junction 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C065080B7S

UF3C065080B7S

SICFET N-CH 650V 27A D2PAK-7

UnitedSiC
2,870 -

RFQ

UF3C065080B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 27A (Tc) - 105mOhm @ 20A, 12V 6V @ 10mA 23 nC @ 12 V ±25V 760 pF @ 100 V - 136.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C120400K3S

UF3C120400K3S

SICFET N-CH 1200V 7.6A TO247-3

UnitedSiC
730 -

RFQ

UF3C120400K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065080T3S

UF3C065080T3S

MOSFET N-CH 650V 31A TO220-3

UnitedSiC
4,957 -

RFQ

UF3C065080T3S

Ficha técnica

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065080T3S

UJ3C065080T3S

MOSFET N-CH 650V 31A TO220-3

UnitedSiC
738 -

RFQ

UJ3C065080T3S

Ficha técnica

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065080K3S

UF3C065080K3S

MOSFET N-CH 650V 31A TO247-3

UnitedSiC
536 -

RFQ

UF3C065080K3S

Ficha técnica

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120080B7S

UF3C120080B7S

SICFET P-CH 1200V 28.8A D2PAK-7

UnitedSiC
1,811 -

RFQ

UF3C120080B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 28.8A (Tc) - 105mOhm @ 20A, 12V 6V @ 10mA 23 nC @ 12 V ±25V 754 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C065040B3

UF3C065040B3

MOSFET N-CH 650V 41A TO263

UnitedSiC
800 -

RFQ

UF3C065040B3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 41A (Tc) 12V 52mOhm @ 30A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 176W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UJ4C075060K3S

UJ4C075060K3S

SICFET N-CH 750V 28A TO247-3

UnitedSiC
6,869 -

RFQ

UJ4C075060K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120150K3S

UJ3C120150K3S

SICFET N-CH 1200V 18.4A TO247-3

UnitedSiC
960 -

RFQ

UJ3C120150K3S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 18.4A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 30 nC @ 15 V ±25V 738 pF @ 100 V - 166.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075033K4S

UJ4C075033K4S

750V/33MOHM, SIC, CASCODE, G4, T

UnitedSiC
526 -

RFQ

UJ4C075033K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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